Continuous-wave operation up to 36°C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters

Volumn 9, Issue 2, 1997, Pages 141-142

  Uchiyama, S ^a,b   Yokouchi, N ^a,b   Ninomiya, T ^b  

^a IEEE   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

Semiconductor lasers; Vertical cavity surface emitting lasers (VCSEL's)

Indexed keywords

ALUMINA; CONTINUOUS WAVE LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SILICA; THERMAL CONDUCTIVITY OF SOLIDS;

THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031075511     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.553065     Document Type: Article

References (8)

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