Constant temperature LEC growth of InGaAs ternary bulk crystals using the double crucible method

Journal of Crystal Growth

Volumn 169, Issue 2, 1996, Pages 217-222

  Nakajima, Kazuo ^a   Kusunoki, Toshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

DOUBLE CRUCIBLE METHOD; LIQUID ENCAPSULATED CZOCHRALSKI (LEC) TECHNIQUE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030566273     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00379-X     Document Type: Article

References (8)

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8. H. Shoji, T. Uchida, T. Kusunoki, M. Matsuda, H. Kurakake, S. Yamazaki, K. Nakajima and H. Ishikawa, IEEE Photonics Technol. Lett. 6 (1994) 1170.