Stable photoluminescence and electroluminescence from porous silicon

Thin Solid Films

Volumn 297, Issue 1-2, 1997, Pages 254-260

  Fauchet, P M ^a,b   Tsybeskov, L ^a   Duttagupta, S P ^a   Hirschman, K D ^a,c  

^a University of Rochester   (United States)

^b UNIVERSITY OF ROCHESTER   (United States)

^c Kate Gleason College of Engineering   (United States)

Author keywords

Electroluminescence; Photoluminescence; Porous silicon; Surface passivation

Indexed keywords

DESIGN; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; OPTIMIZATION; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STABILITY; SURFACES;

SILICON RICH SILICON OXIDE; SURFACE PASSIVATION;

POROUS SILICON;

EID: 0031125680     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09438-2     Document Type: Article

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