Electroluminescence and carrier transport in LEDs based on silicon-rich silicon oxide

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 681-686

  Tsybeskov, L ^a   Hirschman, K D ^a   Duttagupta, S P ^a   Fauchet, P M ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; ELECTROCHEMISTRY; ELECTROLUMINESCENCE; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; ETCHING; ION IMPLANTATION; METALLIZING; PHOTOLITHOGRAPHY; SEMICONDUCTING SILICON COMPOUNDS; THERMOOXIDATION;

CARRIER TRANSITION; CARRIER TRANSPORT; INTERFACE STATE DENSITY; STANDARD MICROELECTRONIC PROCESSING; THERMALLY ASSISTED TUNNELING;

LIGHT EMITTING DIODES;

EID: 0030718876     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)