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Volumn 452, Issue , 1997, Pages 613-618
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Electron time-of-flight measurements in porous silicon
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL STRUCTURE;
CRYSTALLINE MATERIALS;
ELECTRIC CURRENT MEASUREMENT;
ELECTROLUMINESCENCE;
ELECTRON TRANSPORT PROPERTIES;
LASER APPLICATIONS;
TEMPERATURE;
ELECTROLUMINESCENCE MODULATION;
ELECTROLUMINESCENT POROUS SILICON DIODE;
TRANSIENT PHOTOCURRENT MEASUREMENT;
POROUS SILICON;
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EID: 0030714885
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (14)
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References (13)
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