Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

Applied Physics Letters

Volumn 70, Issue 14, 1997, Pages 1790-1792

  Tsybeskov, L ^a   Duttagupta, S P ^a   Hirschman, K D ^a,c   Fauchet, P M ^a,d,e   Moore, K L ^b   Hall, D G ^b  

^a University of Rochester ^*  (United States)

^b UNIVERSITY OF ROCHESTER   (United States)

^c Rochester Institute of Technology   (United States)

^d UNIVERSITY OF ROCHESTER   (United States)

^e UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTROCHEMICAL ELECTRODES; ELECTROLUMINESCENCE; ELECTROPLATING; EMISSION SPECTROSCOPY; ERBIUM; IONS; LIGHT EMITTING DIODES; OXIDATION; PHOTOLUMINESCENCE; SILICA; SILICON WAFERS;

BANDEDGE RECOMBINATION; ERBIUM DOPED SILICON; PARTIAL THERMAL OXIDATION; SILICON RICH SILICON OXIDE;

POROUS SILICON;

EID: 0031557575     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118693     Document Type: Article

References (17)

1. H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, Appl. Phys. Lett. 43, 943 (1983).
2. J. Michel, J. L. Benton, R. F. Rerrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y.-H. Xie, J. M. Poate, and L. C. Kimmerling, J. Appl. Phys. 70, 2672 (1991).
3. S. Lombardo, S. U. Campisano, G. N. van den Hoven, A. Cacciato, and A. Polman, Appl. Phys. Lett. 63, 1942 (1993).
4. M. S. Bresler, O. B. Gusev, V. Kh. Kudoyarova, A. N. Kuznetsov, P. E. Pak, E. I. Terukov, I. N. Yassievich, B. P. Zakharchenya, W. Fuhs, and A. Sturm, Appl. Phys. Lett. 67, 3599 (1995).
5. F. Namavar, F. Lu, C. H. Perry, A. Gremins, N. M. Kalkhoran, J. T. Daly, and R. A. Soref, in Microcrystalline and Nanocrystalline Semiconductors, edited by R. W. Collins, C. C. Tsai, M. Hirose, F. Koch, and L. Brus (Material Research Society, Pittsburgh, PA, 1995), Vol. 358, p. 375.
6. T. Kimura, A. Yokoi, H. Horiguchi, R. Saito, T. Ikoma, and A. Sato, Appl. Phys. Lett. 65, 983 (1994).
7. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
8. P. M. Fauchet, J. Lumin. 70, 294 (1996).
9. J. H. Shin, G. N. von den Hoven, and A. Polman, Appl. Phys. Lett. 66, 2379 (1995).
10. L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, and P. M. Fauchet, Appl. Phys. Lett. 68, 2058 (1996); K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Nature (London) 384, 338 (1996).
11. L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, and P. M. Fauchet, Appl. Phys. Lett. 68, 2058 (1996); K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Nature (London) 384, 338 (1996).
12. P. M. Fauchet, L. Tsybeskov, S. P. Duttagupta, and K. D. Hirschman (unpublished).
13. D. L. Adler, D. C. Jacobson, D. J. Eaglesham, M. A. Marcus, J. L. Benton, J. M. Poate, and P. H. Citrin, Appl. Phys. Lett. 61, 2181 (1992).
14. L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, and P. M. Fauchet, in Advanced Luminescent Materials, edited by D. J. Lockwood, P. M. Fauchet, N. Koshida, and S. R. J. Brueck (Electrochemical Society, Pennington, NJ, 1996), pp. 34-47.
15. G. Franzo, F. Priolo, S. Coffa, A. Polman, and A. Camera, Appl. Phys. Lett. 64, 2235 (1994).
16. B. Zheng, J. Michel, F. Y. G. Ren, L. C. Kimerling, D. C. Jacobson, and J. M. Poate, Appl. Phys. Lett. 64, 2842 (1994).
17. H. Isshiki, H. Kobayashi, S. Yugo, T. Kimura, and T. Ikoma, Appl. Phys. Lett. 58, 484 (1991).