Study of the factors which determine the modulation speed of a shallow PN junction porous silicon LED

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 693-698

  Simons, A J ^a   Cox, T I ^a   Loni, A ^a   Calcott, P D J ^a   Uren, M J ^a   Canham, L T ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ELECTRON ENERGY LEVELS; ETCHING; HETEROJUNCTIONS; ION IMPLANTATION; LUMINESCENT DEVICES; PHOTOLUMINESCENCE; REDUCTION; SEMICONDUCTING SILICON;

CHEMICAL THINNING; DEVICE OPERATING SPEED; SIGNAL EXCITATION;

LIGHT EMITTING DIODES;

EID: 0030678311     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)