Stable electroluminescence from reverse biased n-type porous silicon-aluminum Schottky junction device

Applied Physics Letters

Volumn 68, Issue 15, 1996, Pages 2108-2110

  Lazarouk, S ^a   Jaguiro, P ^a   Katsouba, S ^a   Masini, G ^b   La Monica, S ^b   Maiello, G ^b   Ferrari, A ^b  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTROLUMINESCENCE; ENCAPSULATION; MAGNETRON SPUTTERING; POROUS SILICON; PYROMETERS; SEMICONDUCTOR JUNCTIONS;

JUNCTION BREAKDOWN; LIGHT INTENSITY; POWER EFFICIENCY; WHITE LIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0030574925     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115600     Document Type: Article

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