Over-60-GHz design technology for an SCFL dynamic frequency divider using inP-based HEMT's

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 9, 1998, Pages 1209-1214

  Umeda, Yohtaro ^a   Osafune, Kazuo ^a   Enoki, Takatomo ^a   Yokoyama, Haruki ^a   Ishii, Yasunobu ^b   Imamura, Yoshihiro ^b  

^a NTT CORPORATION   (Japan)

^b Worldwide Product Engineering   (Japan)

Author keywords

Digital integrated circuits; Frequency conversion; Indium compounds; MODFET integrated circuits

Indexed keywords

COMPUTER SIMULATION; DIGITAL INTEGRATED CIRCUITS; FLIP FLOP CIRCUITS; FREQUENCY CONVERTER CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; LOGIC GATES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

DELAY TIME ANALYSIS; DIGITAL DYNAMIC FREQUENCY DIVIDER; LINEAR RESPONSE THEORY; MODFET INTEGRATED CIRCUITS;

FREQUENCY DIVIDING CIRCUITS;

EID: 0032165561     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.709458     Document Type: Article

References (24)

1. L. D. Nguyen, A. S. Brown, M. A. Thompson, and L. M. Jelloian, "50-nm self-aligned gate pseudomorphic AlInAs/GalnAs high electron mobility transistors," IEEE Trans. Electron Devices, vol. 39, pp. 2007-2014, Sept. 1992.
2. max," IEEE Microwave Guided Wave Lett., vol. 5, pp. 230-232, July 1995.
3. M.-Y. Kao, K.-H. G. Duh, P. Ho, and P.-C. Chao, "An extremely lownoise InP-based HEMT with silicon nitride passivation," in IEEE Int. Electron Devices Meeting, San Francisco, CA, Dec. 1994, pp. 907-910.
4. R. T. Webster, J. Slobodnik, and G. A. Roberts, "Monolithic InP HEMT V-band low-noise amplifier," IEEE Microwave Guided Wave Lett., vol. 2, pp. 236-238, June 1992.
5. Y. Umeda, T. Enoki, K. Aral, and Y. Ishii, "High-performance InAlAs/InGaAs HEMT's and their application to a 40-GHz monolithic amplifier," in Extended Abstracts Int. Conf. Solid-State Devices Materials, Tsukuba, Japan, Aug. 1992, pp. 573-575.
6. A. Kurdoghlian, W. Lam, C. Chou, L. Jellian, A. Igawa, M. Matloubian, L. Larson, A. Brown, M. Thompson, and C. Ngo, "High-efficiency InPbased HEMT MMIC power amplifier," in IEEE GaAs 1C Symp. Dig., San Jose, CA, Oct. 1993, pp. 375-377.
7. R. Majidy-Ahy, C. K. Nishimoto, M. Riaziat, M. Glenn, S. Silvermann, S.-L. Weng, Y.-C. Pao, G. A. Zudasiuk, S. G. Bandy, and Z. C. H. Tan, "5-100 GHz InP coplanar waveguide MMIC distributed amplifier," IEEE Trans. Microwave Theory Tech., vol. 38, Dec. 1990.
8. Y. Kwon, D. Pavlidis, M. Tutt, G. I. Ng, and T. Brock, "W-band monolithic mixer using InAlAs/InGaAs HEMT," in IEEE GaAs 1C Symp. Tech. Dig., New Orleans, LA, Oct. 1990, pp. 181-184.
9. Y. Kwon, D. Pavlidis, M. Tutt, G. I. Ng, R. Lai, and T. Brock, "W-band monolithic oscillator using InAlAs/InGaAs HEMT," Electron. Lett., vol. 26, no. 18, pp. 1425-1426, Aug. 1990.
10. K. W. Chang, H. Wang, R. Lai, D. C. Lo, and J. Berenz, "A V-band monolithic InP HEMT downconverter," in IEEE GaAs 1C Symp. Dig., San Jose, CA, Oct. 1993, pp. 211-214.
11. U. K. Mishra, J. F. Jensen, A. S. Brown, M. A. Thompson, L. M. Jelloian, and R. S. Beaubien, "Ultra-high-speed digital circuit performance in 0.2-ftm gate-length AHn As/Gain As HEMT technology," IEEE Electron Device Lett., vol. 9, pp. 48284, Sept. 1988.
12. T. Takada, K. Osafune, M. Idda, and N. Ohta, "GaAs high speed decision circuit," IECE, Japan, Tech. Rep. SSD82-111, pp. 438, 1983 (in Japanese).
13. T. Enoki, Y. Umeda, K. Osafune, H. Ito, and Y. Ishii, "Ultrahigh-speed InAlAs/InGaAs HEMT's 1C's using pn-level-shift diodes," in Proc. IEDM Tech. Dig., Washington, DC, Dec. 1995, pp. 193-196.
14. T. Otsuji, M. Yoneyama, Y. Imai, S. Yamaguchi, T. Enoki, Y. Umeda, and E. Sano, "46 Gbit/s multiplexer and 40 Gbit/s démultiplexer 1C modules using InAlAs/InGaAs/InP HEMT's," Electron. Lett., vol. 32, no. 7, pp. 685-686, 1996.
15. J.-C. Sarkissian, M. Camiade, P. Savary, A. Suares, R. Quere, and J. Obregon, "A 60-GHz HEMT-MMIC analog frequency divider by two," IEEE J. Solid-State Circuits, vol. 30, pp. 1062-1067, Oct. 1995.
16. C. J. Madden, D. R. Snook, R. L. V. Tuyl, M. V. Le, and L. D. Nguyen, "A novel 75 GHz InP HEMT dynamic divider," in IEEE GaAs 1C Symp. Dig., Orlando, FL, Oct. 1996, pp. 137-140.
17. A. Thiede, M. Berroth, P. Tasker, M. Schlechtweg, J. Seibel, B. Raynor, A. Hulsmann, K. Kohler, and W. Bronner, "Digital dynamic frequency dividers for broad-band application up to 60 GHz," in IEEE GaAs 1C Symp. Dig., San Jose, CA, Oct. 1993, pp. 91-94.
18. Y. Matsuoka, S. Yamahata, S. Yamaguchi, K. Murata, E. Sano, and T. Ishibashi, "IC-oriented self-aligned high-performance AlGaAs/GaAs ballistic collection transistors and their applications to high-speed IC's," lEICETrans. Electron, vol. E76-C, no. 9, pp. 1392-1401, Sept. 1993.
19. K. Murata, T. Otsuji, E. Sano, M. Ohhata, M. Togashi, and M. Suzuki, "A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-ftm GaAs MESFET," IEEE J. Solid State Circuits, vol. 30, pp. 1101-1108, Oct. 1995.
20. Y. Umeda, T. Enoki, K. Osafune, H. Ito, and Y. Ishii, "High-yield design technologies for InAlAs/InGaAs/InP-HEMT analog-digital IC's," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2361-2368, Dec. 1996.
21. Y. Umeda, K. Osafune, T. Enoki, H. Ito, and Y. Ishii, "SCFL static frequency divider using InAlAs/InGaAs/InP HEMT's," in Proc. 25th European Microwave Conf., Bologna, Italy, Sept. 1995, pp. 222-228.
22. T. Enoki, T. Kobayashi, and Y. Ishii, "Device technologies for InPbased HEMT's and their application to IC's," in IEEE GaAs 1C Symp. Tech. Dig., Philadelphia, PA, Oct. 1994, pp. 337-340.
23. T. Enoki, H. Ito, and Y. Ishii, "Reliability study on InAlAs/InGaAs HEMT's with an InP recess etch stopper and refractory gate metal," Solid State Electron., vol. 41, no. 10, pp. 1651-1656, 1997.
24. T. Enoki, M. Tomizawa, Y. Umeda, and Y. Ishii, "0.05-//m-gate InAlAs/InGaAs high electron mobility transistor and reduction of its short-channel effects," Jpn. J. Appl. Phys. I, Regul. Rap. Short Notes, vol. 33, no. IB, pp. 798-803, Jan. 1994.