V-band monolithic InP HEMT downconverter

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1993, Pages 211-214

  Chang, K W ^a   Wang, H ^a   Lai, R ^a   Lo, D C ^a   Berenz, J ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK PARAMETERS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MIXER CIRCUITS; MONOLITHIC INTEGRATED CIRCUITS; PRODUCT DESIGN; RADIO FREQUENCY AMPLIFIERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL TO NOISE RATIO;

CONVERSION GAIN; DIODE MIXER; IF DISTRIBUTED AMPLIFIER; LOW NOISE AMPLIFIERS; MICROWAVE MONOLITHIC INTEGRATED CIRCUIT; MONOLITHIC V BAND DOWNCONVERTER;

FREQUENCY CONVERTERS;

EID: 0027802735     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)