The adsorption and thermal reaction of dimethylcadmium, dimethylzinc and trimethylgallium on GaAs(110)

Surface Science

Volumn 364, Issue 3, 1996, Pages 312-324

  Lasky, P J ^a   Lu, P H ^a   Luo, Y ^a   Slater, D A ^a   Osgood, R M ^a  

^a Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

Arsenic; Cadmium; Gallium; Gallium arsenide; Growth; Low index single crystal surfaces; Molecule solid reactions; Semiconductor semiconductor interfaces; Surface chemical reaction; Thermal desorption; Thermal desorption spectroscopy

Indexed keywords

ADSORPTION; CHEMICAL REACTIONS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY; SURFACES; SYNTHESIS (CHEMICAL); TEMPERATURE PROGRAMMED DESORPTION; X RAY PHOTOELECTRON SPECTROSCOPY;

DIMETHYLCADMIUM; DIMETHYLZINC; LOW INDEX SINGLE CRYSTAL SURFACES; MOLECULE SOLID INTERACTIONS; SEMICONDUCTOR SEMICONDUCTOR INTERFACES; SURFACE CHEMICAL REACTIONS; THERMAL DESORPTION SPECTROSCOPY; TRIMETHYLGALLIUM;

ORGANOMETALLICS;

EID: 0030241252     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00621-8     Document Type: Article

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