The chemistry of gallium deposition on Si(001) from trimethylgallium: An atomically resolved STM study

Surface Science

Volumn 348, Issue 3, 1996, Pages 311-324

  Bronikowski, Michael J ^a,b   Hamers, Robert J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b UNIVERSITY OF COLORADO   (United States)

Author keywords

Aluminum; Chemical vapor deposition; Chemisorption; Epitaxy; Molecular beam epitaxy; Organometallics; Scanning tunneling microscopy; Surface chemical reaction

Indexed keywords

CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; CHEMISTRY; CRYSTAL LATTICES; DISSOCIATION; MOLECULAR BEAM EPITAXY; ORGANOMETALLICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SURFACES;

BIAS DEPENDENT IMAGING; DIMETHYLGALLIUM FRAGMENT; GALLIUM DEPOSITION; GALLIUM DIMERS; METHYL GROUP; SURFACE CHEMICAL REACTION; TRIMETHYLGALLIUM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030105612     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01048-3     Document Type: Article

References (30)

1. C.R. Flores, X.-L. Zhou and J.M. White, Surf. Sci. 261 (1992) 99.
2. S. Satoshi, Y. Matsumi, M. Kawasaki, I. Toyoshima and H. Okabe, J. Appl. Phys. 70 (1990) 462.
3. F. Lee, T.R. Gow and R.I. Masel, J. Electrochem. Soc. 136 (1989) 2640.
4. A. Forster and H. Luth, J. Vac. Sci. Technol. B 7 (1989) 720.
5. T.R. Gow, R. Lin and R.I. Masel, J. Cryst. Growth 106 (1990) 577.
6. F. Lee, A.L. Backman, R. Lin, T.R. Gow and R.I. Masel, Surf. Sci. 216 (1989) 173.
7. R. Lin and R.I. Masel, Surf. Sci. 258 (1991) 225.
8. T.F. Kuech, Proc. IEEE 80 (1992) 1609.
9. M. McEllistrem, G. Haase, D. Chen and R.J. Hamers, Phys. Rev. Lett. 70 (1993) 2471.
10. X. Chen, B. Cousins, M. McEllistrem and R.J. Hamers, Rev. Sci. Instrum. 63 (1992) 4308.
11. R.J. Hamers, P. Avouris and F. Bozso, J. Vac. Sci. Technol. A 6 (1988) 508.
12. A.A. Baski, J. Nogami and C.F. Quate, J. Vac. Sci. Technol. A 8 (1990) 245.
13. J. Nogami, S. Park and C.F. Quate, Appl. Phys. Lett. 53 (1988) 2086.
14. J. Nogami, A.A. Baski and C.F. Quate, J. Vac. Sci. Technol. A 8 (1990) 3520.
15. A.A. Baski, J. Nogami and C.F. Quate, J. Vac. Sci. Technol. A 9 (1991) 1946.
16. A.A. Baski, J. Nogami and C.F. Quate, Phys. Rev. B 43 (1991) 9316.
17. H. Itoh, J. Itoh, A. Schmid and T. Ichinokawa, Phys. Rev. B 48 (1993) 14663.
18. J. Nogami, A.A. Baski and C.F. Quate, Phys. Rev. B 44 (1991) 1415.
19. B.E. Steele, L. Li, J.L. Stevens and I.S.T. Tsong, Phys. Rev. B 47 (1993) 9925.
20. I.P. Batra, Phys. Rev. Lett. 63 (1989) 1704.
21. J.E. Northrup, M.C. Schabel, C.J. Karlsson and R.I.G. Uhrberg, Phys. Rev. B 44 (1991) 13799.
22. T. Yamazaki, M. Ikeda, Y. Morikawa and K. Terakura, in: Computer Aided Innovation of New Materials. Ed. M. Doyama. (Elsevier, New York, 1993).
23. B. Bourguignon, K.L. Carleton and S.R. Leone, Surf. Sci. 204 (1988) 455.
24. Y. Wang, M.J. Bronikowski and R.J. Hamers, Surf. Sci. 311 (1994) 64.
25. M.J. Bronikowski and R.J. Hamers, J. Vac. Sci. Technol. A 13 (1995) 777.
26. J.J. Boland, Science 262 (1993) 1703.
27. M.L. Colaianni, P.J. Chen, H. Gutleben and J.T. Yates, Chem. Phys. Lett. 191 (1992) 561.
28. R. Lin, L. Cadwell and R.I. Masel, J. Vac. Sci. Technol. A 12 (1994) 179.
29. J.R. Creighton, unpublished results.
30. F.H. Field and J.L. Framklin, Eds., Electron Impact Phenomena (Academic Press, New York, 1970).