Barrier properties of titanium nitride films grown by low temperature chemical vapor deposition from titanium tetraiodide

Journal of the Electrochemical Society

Volumn 144, Issue 3, 1997, Pages 1002-1008

  Faltermeier, Cheryl ^a   Goldberg, Cindy ^a   Jones, Michael ^a   Upham, Allan ^a   Manger, Dirk ^a   Peterson, Gregory ^a   Lau, Janice ^a   Kaloyeros, Alain E ^a   Arkles, Barry ^b   Paranjpe, Ajit ^c,d  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b Gelest Inc   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d CVC Products   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DENSITY (SPECIFIC GRAVITY); DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; HYDROGEN; TEXTURES; THIN FILMS; ULSI CIRCUITS;

BARRIER PROPERTIES; TITANIUM TETRAIODIDE;

TITANIUM NITRIDE;

EID: 0031099125     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837520     Document Type: Article

References (25)

1. The National Technology Roadmap for Semiconductors, p. 94, Semiconductor Industry Association, San Jose, CA (1994).
2. S. P. Murarka, Metallization: Theory and Practice for VLSI and ULSI, Butterworth-Heinemann, Boston, MA (1993).
3. A. Intemann, H. Koerner, G. Ruhl, K. Hieber, and E. Hartmann, in Advanced Metallization for ULSI Applications-X, R. Blumenthal and G. Jenssen, Editors, p. 209, Materials Research Society, Pittsburgh, PA (1995).
4. J. M. Fu, M. Narasimhan, G. D. Yao, X. Xu, and F. Chen, in Proceedings of the 12th International VLSI Multilevel Interconnection Conference, p. 198, VMIC, Tampa, FL (1995).
5. A. Hobbs, K. Inoue, H Takagi, K. Mashimo, T. Hosoda, and T. Nakamura, ibid., p. 225.
6. I. Wagner, ibid., p. 226.
7. See, for example, A. Sherman, This Journal, 137, 1892 (1990); M. J. Buiting, A. F. Otterloo, and A. H. Montree, ibid., 138, 500 (1991); N. Yokoyama, K. Hinode, and Y. Homma, ibid., 138, 190 (1991).
8. See, for example, A. Sherman, This Journal, 137, 1892 (1990); M. J. Buiting, A. F. Otterloo, and A. H. Montree, ibid., 138, 500 (1991); N. Yokoyama, K. Hinode, and Y. Homma, ibid., 138, 190 (1991).
9. See, for example, A. Sherman, This Journal, 137, 1892 (1990); M. J. Buiting, A. F. Otterloo, and A. H. Montree, ibid., 138, 500 (1991); N. Yokoyama, K. Hinode, and Y. Homma, ibid., 138, 190 (1991).
10. See, for example, T. Akahori, and A. Tanihara, in Proceedings of International Conference on Solid State Devices and Materials, p. 180, Yokohama, Japan (1991); T. Miyamoto, A. Kawashima, S. Kadomura, and J. Aoyama, in Proceedings of the 12th International VLSI Multilevel Interconnection Conference, p. 195, VMIC, Tampa, FL (1995).
11. See, for example, T. Akahori, and A. Tanihara, in Proceedings of International Conference on Solid State Devices and Materials, p. 180, Yokohama, Japan (1991); T. Miyamoto, A. Kawashima, S. Kadomura, and J. Aoyama, in Proceedings of the 12th International VLSI Multilevel Interconnection Conference, p. 195, VMIC, Tampa, FL (1995).
12. S. C. Selbrede, in Advanced Metallization for ULSI Applications VIII, T. S. Cale and F. S. Pintchovski, Editors, p. 359, Materials Research Society, Pittsburgh, PA (1993).
13. See, for example: (a) R. M. Fix, R. G. Gordon, and D. M. Hoffman, MRS Symp. Proc. Vol., 168, 357 (1990) (b) K. Ishihara, Y. Yamazaki, H. Hamada, K. Kamisako, and Y. Tarui, Jpn. J. Appl. Phys., 29, 2103 (1990) (c) R. M. Fix, R. G. Gordon, and D. M. Hoffman, Chem. Mater., 3, 1138 (1991) (d) J. A. Prybyla and L. H. Dubois, in Chemical Perspectives of Microelectronic Materials III, C. R. Abernathy, C. W. Bates, Jr., D. A. Bohling, and W. S. Hobson, Editors, p 287, MRS, Pittsburgh, PA (1992).
14. See, for example: (a) R. M. Fix, R. G. Gordon, and D. M. Hoffman, MRS Symp. Proc. Vol., 168, 357 (1990) (b) K. Ishihara, Y. Yamazaki, H. Hamada, K. Kamisako, and Y. Tarui, Jpn. J. Appl. Phys., 29, 2103 (1990) (c) R. M. Fix, R. G. Gordon, and D. M. Hoffman, Chem. Mater., 3, 1138 (1991) (d) J. A. Prybyla and L. H. Dubois, in Chemical Perspectives of Microelectronic Materials III, C. R. Abernathy, C. W. Bates, Jr., D. A. Bohling, and W. S. Hobson, Editors, p 287, MRS, Pittsburgh, PA (1992).
15. See, for example: (a) R. M. Fix, R. G. Gordon, and D. M. Hoffman, MRS Symp. Proc. Vol., 168, 357 (1990) (b) K. Ishihara, Y. Yamazaki, H. Hamada, K. Kamisako, and Y. Tarui, Jpn. J. Appl. Phys., 29, 2103 (1990) (c) R. M. Fix, R. G. Gordon, and D. M. Hoffman, Chem. Mater., 3, 1138 (1991) (d) J. A. Prybyla and L. H. Dubois, in Chemical Perspectives of Microelectronic Materials III, C. R. Abernathy, C. W. Bates, Jr., D. A. Bohling, and W. S. Hobson, Editors, p 287, MRS, Pittsburgh, PA (1992).
16. See, for example: (a) R. M. Fix, R. G. Gordon, and D. M. Hoffman, MRS Symp. Proc. Vol., 168, 357 (1990) (b) K. Ishihara, Y. Yamazaki, H. Hamada, K. Kamisako, and Y. Tarui, Jpn. J. Appl. Phys., 29, 2103 (1990) (c) R. M. Fix, R. G. Gordon, and D. M. Hoffman, Chem. Mater., 3, 1138 (1991) (d) J. A. Prybyla and L. H. Dubois, in Chemical Perspectives of Microelectronic Materials III, C. R. Abernathy, C. W. Bates, Jr., D. A. Bohling, and W. S. Hobson, Editors, p 287, MRS, Pittsburgh, PA (1992).
17. C. H. Winter, T. Suren Lewkebandara, and P. H. Sheridan, ibid., p. 293.
18. See, for instance, R. L. Jackson, E. J. McInerney, B. Roberts, J. Strupp, A. Velaga, S. Patel, and L. Halliday, in Advanced Metallizatin for ULSI Applications-X, R. Blumenthal and G. Jenssen, Editors, p. 223, Materials Research Society, Pittsburgh, PA (1995); G. A. Dixit, R. H. Havemann, L. Halliday, J. Strupp, B. Roberts, R. L. Jackson, and E. J. McInerney, in Proceedings of 12th International VLSI Multilevel Interconnection Conference, p. 175, VMIC, Tampa, FL (1995); G. A. Dixit, M. K. Jain, M. F. Chisholm, T. Weaver, R. H. Havemann, K. A. Littau, M. Eizenberg, S. Ghanayem, H. Tran, Y. Maeda, M. Chang, and A. Sinha, in Advanced Metallization for ULSI Application X, R. Blumenthal and G. Jenssen Editors, p. 239. Materials Research Society, Pittsburgh, PA (1995).
19. See, for instance, R. L. Jackson, E. J. McInerney, B. Roberts, J. Strupp, A. Velaga, S. Patel, and L. Halliday, in Advanced Metallizatin for ULSI Applications-X, R. Blumenthal and G. Jenssen, Editors, p. 223, Materials Research Society, Pittsburgh, PA (1995); G. A. Dixit, R. H. Havemann, L. Halliday, J. Strupp, B. Roberts, R. L. Jackson, and E. J. McInerney, in Proceedings of 12th International VLSI Multilevel Interconnection Conference, p. 175, VMIC, Tampa, FL (1995); G. A. Dixit, M. K. Jain, M. F. Chisholm, T. Weaver, R. H. Havemann, K. A. Littau, M. Eizenberg, S. Ghanayem, H. Tran, Y. Maeda, M. Chang, and A. Sinha, in Advanced Metallization for ULSI Application X, R. Blumenthal and G. Jenssen Editors, p. 239. Materials Research Society, Pittsburgh, PA (1995).
20. See, for instance, R. L. Jackson, E. J. McInerney, B. Roberts, J. Strupp, A. Velaga, S. Patel, and L. Halliday, in Advanced Metallizatin for ULSI Applications-X, R. Blumenthal and G. Jenssen, Editors, p. 223, Materials Research Society, Pittsburgh, PA (1995); G. A. Dixit, R. H. Havemann, L. Halliday, J. Strupp, B. Roberts, R. L. Jackson, and E. J. McInerney, in Proceedings of 12th International VLSI Multilevel Interconnection Conference, p. 175, VMIC, Tampa, FL (1995); G. A. Dixit, M. K. Jain, M. F. Chisholm, T. Weaver, R. H. Havemann, K. A. Littau, M. Eizenberg, S. Ghanayem, H. Tran, Y. Maeda, M. Chang, and A. Sinha, in Advanced Metallization for ULSI Application X, R. Blumenthal and G. Jenssen Editors, p. 239. Materials Research Society, Pittsburgh, PA (1995).
21. M. Seel and P. S. Bagus, Phys. Rev. B, 28, 2023 (1983).
22. C. Goldberg, E. Eisenbraun, S. Komarov, C. Faltermeier, X. Chen, M. Jones, A. Ivanova, R. Fiordalice, F. Pintchovski, B. Arkles, A. Hepp, and A. E. Kaloyeros, in Advanced Metallization for ULSI Application X, R. Blumenthal and G. Janssen, Editors, p. 247, MRS Pittsburgh, PA (1995).
23. N. Yokoyama, K. Hinode, and Y. Homma, Abstract 466, p. 679 The Electrochemical Society Meeting Abstracts, Vol. 89-2, Hollywood, FL, Oct. 15-20, 1989.
24. N. Yokoyama, Y. Homma, and K. Mukai, U.S. Pat. 4,897,709 (1990).
25. B. Fiordalice, R. Hedge, and H. Kawasaki, This Journal, 143, 2059 (1996).