'Edge terminations for SiC high voltage Schottky rectifiers'

Volumn , Issue , 1993, Pages 89-94

  Bhatnagar, M ^a   Nakanishi, H ^a   Bothra, S ^a   McLarty, P K ^a   Baliga, B J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; FABRICATION; MATHEMATICAL MODELS; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON CARBIDE; SOLID STATE RECTIFIERS;

BREAKDOWN VOLTAGE; EDGE TERMINATIONS; FLOATING METAL FIELD RINGS; RESISTIVE SCHOTTKY BARRIER FIELD PLATE;

SCHOTTKY BARRIER DIODES;

EID: 0027149650     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)