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Applied Physics Letters

Volumn , Issue , 1995, Pages 1501-

SiC power device passivation using porous SiC

(4) Harris, C I a Konstantinov, A O a Hallin, C a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449006541 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.113668 Document Type: Article

Times cited : (15)

References (10)

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2
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- edited by D. B. King and F. V. Thome Sandia National Laboratories, Albuquerque, NM
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- Edmond, J.D.¹ Waltz, D.G.² Brueckner, S.³ Kong, H.S.⁴ Palmour, J.W.⁵ Carter, C.H.⁶

3
- 0039866488
- (1993) Inst. Phys. Conf. Ser. , vol.137 , pp. 475
- Neudeck, P.G.¹ Larkin, D.J.² Salupo, C.S.³ Powell, J.A.⁴ Matus, L.G.⁵

4
- 85069064957
- (1991) Appl. Phys. A , vol.53 , pp. 8
- Föll, H.¹

5
- 0000689595
- (1993) Appl. Phys. Lett. , vol.62 , pp. 2836
- Shor, J.S.¹ Grimberg, I.² Weiss, B.-Z.³ Kurtz, A.D.⁴

6
- 0027927258
- (1994) Appl. Phys. Lett. , vol.64 , pp. 226
- Matsumoto, T.¹ Takahashi, J.² Tamaki, T.³ Futagai, T.⁴ Mimura, H.⁵

7
- 0000467637
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2699
- Konstantinov, A.O.¹ Harris, C.I.² Janzèn, E.³

8
- 0043247320
- (1993) Inst. Phys. Conf. Ser. , vol.137 , pp. 37
- Konstantinov, A.O.¹ Ivanov, P.A.²

9
- 0004005306
- 2nd ed. Wiley, New York Chap. 7
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

10
- 0004128837
- Academic, New York Chap. 5
- (1981) Field-Effect and Bipolar Power Transistor Physics
- Blicher, A.¹

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