The Guard-Ring Termination for the High-Voltage SiC Schottky Barrier Diodes

IEEE Electron Device Letters

Volumn 16, Issue 7, 1995, Pages 331-332

  Ueno, Katsunori ^a   Urushidani, Tatsuo ^a   Hashimoto, Kouichi ^a   Seki, Yasukazu ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; ELECTRIC FIELDS; OXIDATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; TITANIUM;

BREAKDOWN VOLTAGE; GUARD RING STRUCTURE; OHMIC CONTACT; SCHOTTKY METAL PATTERN;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029345172     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.388724     Document Type: Article

References (6)

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