Growth of GaN/AlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium

Journal of Crystal Growth

Volumn 167, Issue 1-2, 1996, Pages 1-7

  Ambacher, O ^a   Dimitrov, R ^a   Lentz, D ^a   Metzger, T ^a   Rieger, W ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ENERGY GAP; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION;

BUFFER LAYERS; PHOTOTHERMAL DEFLECTION; TRIETHYLGALLIUM; TRITERTBUTYLALUMINUM;

SEMICONDUCTING FILMS;

EID: 0030565188     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00244-8     Document Type: Article

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