MOVPE of GaN using a specially designed two-flow horizontal reactor

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 312-315

  Nishida, K ^b   Haneda, S ^b   Hara, K ^b   Munekata, H ^b   Kukimoto, H ^a,b  

^a TOPPAN PRINTING CO LTD   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HALL EFFECT; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030704057     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00598-2     Document Type: Article

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