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Volumn 117-118, Issue , 1997, Pages 530-535
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Heteroepitaxy of GaN and related materials with a novel two-flow MOVPE horizontal reactor
b
HITACHI LTD
(Japan)
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Author keywords
GaN; Heterointerface; Metal organic vapor phase epitaxy; Wurtzite; X ray diffraction
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Indexed keywords
INTERFACES (MATERIALS);
METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING INDIUM COMPOUNDS;
X RAY CRYSTALLOGRAPHY;
HORIZONTAL REACTOR;
SEMICONDUCTING GALLIUM NITRIDE;
WURTZITE;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0031548440
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(97)80137-7 Document Type: Article |
Times cited : (4)
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References (15)
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