Three-dimensional silicon mmic's operating up to at-band

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 5 PART 2, 1998, Pages 677-684

  Nishikawa, Kenjiro ^a   Toyoda, Ichihiko ^a   Kamogawa, Kenji ^a   Tokumitsu, Tsuneo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Bipolar transistor; Masterslice; Mixer; Mmic's; Multilayer; Silicon; Three dimensional structure

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC CONDUCTIVITY OF SOLIDS; MIXER CIRCUITS; MULTILAYERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

FREQUENCY CONVERSION LOSS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0032074983     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.668682     Document Type: Article

References (30)

1. M. Madihian, E. Bak, H. Yoshida, H. Hirabayashi, K. Imai, Y. Kinoshita, T. Yamazaki, and L. Desclos, "A 2-V, 1-10 GHz BiCMOS transceiver chip for multimode wireless communications networks," IEEE J. SolidState Circuits, vol. 32, pp. 521-525, Apr. 1997.
2. T. Okamura, C. Kurioka, Y. Kuraishi, O. Tsuzuki, T. Senba, M. Ushirozawa, and M. Fujimaru, "10-GHz Si bipolar amplifier and mixer 1C's for coherent optical systems," IEEE J. Solid-State Circuits, vol. 27, pp. 1775-1779, Dec. 1992.
3. S. P. Voinigescu and M. C. Maliepaard, "5.8 GHz and 12.6 GHz Si bipolar MMIC's," in IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, Feb. 1997, pp. 372-373.
4. J. R. Long, M. A. Copeland, S. J. Kovacic, D. S. Malhi, and D. L. Harame, "RF analog and digital circuits in SiGe technology," in IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, Feb. 1996, pp. 82-83.
5. A. C. Reyes, S. M. El-Ghazaly, S. J. Dorn, M. Dydyk, D. K. Schrodar, and H. Patterson, "Coplanar waveguides and microwave inductors on Silicon substrates," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2016-2022, Sept. 1995.
6. C. Rheinfelder, K. Strohm, F. Beiwanger, J. Gerdes, F. J. Schmückle, J.-F. Luy, and W. Heinrich, "26 GHz coplanar SiGe MMIC's," in IEEE Microwave Millimeter-Wave Monolithic Circuits Symp. Dig., San Francisco, CA, June 1996, pp. 205-208.
7. G. Ponchak, A. N. Downey, and L. P. B. Katehi, "High frequency interconnects on Silicon substrate," in IEEE RF 1C Symp. Dig., Denver, CO, June 1997, pp. 101-104.
8. M. Case, S. A. Maas, L. Larson, D. Rensch, D. Harame, and B. Meyerson, "An X-band monolithic active mixer in SiGe HBT technology," in IEEE Int. MTTS Dig., San Francisco, CA, June 1996, pp. 655-658.
9. L. Larson, M. Case, S. Rosenbaum, D. Rensch, P. MacDonald, M. Matloubian, M. Chen, D. Harame, J. Malinowski, B. Meyerson, M. Gilbert, and S. Maas, "Si/SiGe HBT technology for low-cost monolithic microwave integrated circuits," in Int. Solid-State Circuits Conf. Dig., San Francisco, CA, Feb. 1996, pp. 80-81.
10. J. N. Burghartz, M. Soyuer, and K. A. Jenkis, "Microwave inductors and capacitors in standard multilevel interconnect Silicon technology," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 100-104, Jan. 1996.
11. R. A. Johnson, C. E. Chang, P. M. Asbeck, M. E. Wood, G. A. Garcia, and I. Lagnado, "Comparison of microwave inductors fabricated on Silicon-on-sapphire and bulk Silicon," IEEE Microwave Guided Wave Lett., vol. 6, pp. 323-325, Sept. 1996.
12. R. Lowther, A. Begley, G. Bajor, A. Rivoli, and W. R. Eisenstadt, "Substrate parasitics and dual-resistivity substrates," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 1170-1174, July 1996.
13. N. Suematsu, M. Ono, S. Kubo, Y. lyama, and O. Ishida, "L-band internally matched Si MMIC front-end," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2375-2378, Dec. 1996.
14. T. Tokumitsu, K. Nishikawa, K. Kamogawa, I. Toyoda, and M. Aikawa, "Three-dimensional MMIC technology for multifunction integration and its possible application to masterslice MMIC," in IEEE Microwave Millimeter-Wave Monolithic Symp. Dig., San Francisco, CA, June 1996, pp. 85-88.
15. T. Tokumitsu, M. Hirano, K. Yamasaki, C. Yamaguchi, and M. Aikawa, "Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's," in Proc. IEEE GaAs 1C Symp., Orlando, FL, Oct. 1996, pp. 151-154.
16. M. Hirano, K. Nishikawa, I. Toyoda, S. Aoyama, S. Sugitani, and K. Yamasaki, "Three-dimensional passive circuit technology for ultracompact MMIC's," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2845-2850, Dec. 1995.
17. I. Toyoda, K. Nishikawa, T. Tokumitsu, K. Kamogawa, C. Yamaguchi, M. Hirano, and M. Aikawa, "Three-dimensional masterslice MMIC on Si substrate," in IEEE RF 1C Symp. Dig., Denver, CO, June 1997, pp. 113-116.
18. H. Sugahara, M. Kimizuka, Y. Fukai, M. Hirano, and F. Hyuga, "Reliability study on three-dimensional Au/WSiN interconnections for Ultra-compact MMIC's," in ESREF'97, Bordeaux, France, 1997, pp. 1659-1662.
19. C. Yamaguchi, Y. Kobayashi, M. Miyake, K. Ishii, and H. Ichino, "0.5 ftm bipolar technology using a new base formation method: SST1C," in Proc. IEEE Bipolar Circuits Tech. Meeting., Minneapolis St. Paul, Sept. 1993, pp. 63-66.
20. T. Nakagawa and T. Hirota, "Low intermodulation A'-band resistive FET mixer MMIC" (in Japanese), vol. C-75, in Proc. IEICE Fall Conf., Sendai, Japan, Sept. 1994.
21. J. Wholey, I. Kipnis, and C. Snapp, "Silicon bipolar double balanced active mixer MMIC's for RF and microwave applications up to 6 GHz," in IEEE MTTS Int. Microwave Symp. Dig., Long Beach, CA, June 1989, pp. 281-285.
22. J. M. Moniz and B. Maoz, "Improving the dynamic range of Si MMIC Gilbert cell mixers for homodyne receivers," in IEEE Microwave Millimeter-Wave Monolithic Symp. Dig., San Diego, CA, June 1994, pp. 103-106.
23. T. Tsukahara, M. Ishikawa, and M. Muraguchi, "A 2 V 2 GHz Sibipolar direct-conversion quadrature modulator," in IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, Feb. 1994, pp. 40-11.
24. M. Madihian, K. Imai, H. Yoshida, Y. Kinoshita, and T. Yamazaki, "L-C-band low-voltage BiCMOS MMIC's for dual-mode cellularLAN applications," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2025-2031, Nov. 1996.
25. J. R. Long and M. A. Copeland, "A 1.9 GHz low-voltage Silicon bipolar receiver front-end for wireless personal communications systems," IEEE J. Solid-State Circuits, vol. 30, pp. 1438-1448, Dec. 1995.
26. J. C. Rudell, J. Ou, T. B. Cho, G. Chein, F. Brianti, J. A. Weldon, and P. R. Gray, "A 1.9 GHz wide-band IF double conversion CMOS integrated receiver for cordless telephone applications," in IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, Feb. 1997, pp. 304-305.
27. A. Rofougaran, J. Chang, M. Rofougaran, and A. A. Abidi, "A 1 GHz CMOS RF front-END 1C for a direct-conversion wireless receiver," IEEE J. Solid-State Circuits, vol. 31, pp. 880-889, July 1996.
28. P. R. Kinget and M. Steyaert, "A 1-GHz CMOS up-conversion mixer," IEEEJ. Solid-State Circuits, vol. 32, pp. 370-376, Mar. 1997.
29. max silicon bipolar transistors using ultra-highperformance super self-aligned process technology for low-energy and ultra-high-speed LSI's," in Proc. IEEE Int. Electron Device Meeting, Washington, DC, 1995, pp. 735-738.
30. I. Toyoda, T. Tokumitsu, and M. Aikawa, "Highly integrated threedimensional MMIC single-chip receiver and transmitter," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2340-2346, Dec. 1997.