0.5-μm bipolar technology using a new base formation method : SST1C

Proceedings of the 1993 Bipolar/Bicoms Circuits and Technology

Volumn , Issue , 1993, Pages 63-66

  Yamaguchi, Chikara ^a   Kobayashi, Yoshiji ^a   Miyake, Masayasu ^a   Ishii, Kiyoshi ^a   Ichino, Haruhiko ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DIFFUSION; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; EMITTER COUPLED LOGIC CIRCUITS; ION IMPLANTATION; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THIN FILMS;

BIPOLAR TECHNOLOGY; NEW BASE FORMATION METHOD; SUPER SELF ALIGNED PROCESS TECHNOLOGY;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 0027873599     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)