Reliability study on three-dimensional Au/WSiN interconnections for ultra-compact MMICs

Microelectronics Reliability

Volumn 37, Issue 10-11, 1997, Pages 1659-1662

  Sugahara, Hirohiko ^a   Kimizuka, Masakatsu ^a   Fukai, Yoshino K ^a   Hirano, Makoto ^a   Hyuga, Fumiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RELIABILITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; THERMAL CYCLING; THREE DIMENSIONAL;

BIAS STRESS; THREE DIMENSIONAL INTERCONNECTION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031251485     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00133-9     Document Type: Article

References (3)

1. M. Hirano, et al., "1995 IEEE MTT-S Digest," p. 1447.
2. K. Onodera, et al., IEEE Trans. Microwave Theory and Tech. 44, 2347 (1996).
3. H. Sugahara, et al., Appl. Surf. Sci. 41/42, 207 (1989).