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Journal of Applied Physics

Volumn 46, Issue 7, 1975, Pages 2877-2881

Ferroelectric field-effect memory device using Bi4Ti 3O12 film

(3) Sugibuchi, K a Kurogi, Y a Endo, N a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, SEMICONDUCTOR - STORAGE DEVICES; FERROELECTRIC DEVICES;

TRANSISTORS, FIELD EFFECT;

EID: 0016534696 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.322014 Document Type: Article

Times cited : (234)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.