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Volumn , Issue , 1994, Pages 7-16
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Future DRAM development and prospects for ferroelectric memories
a
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Author keywords
[No Author keywords available]
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Indexed keywords
DATA PROCESSING;
FERROELECTRIC DEVICES;
FIELD EFFECT TRANSISTORS;
INTERFACES (MATERIALS);
NONVOLATILE STORAGE;
OPTIMIZATION;
PERMITTIVITY;
POLARIZATION;
VLSI CIRCUITS;
DYNAMIC RANDOM ACCESS MEMORIES (DRAM);
FERROELECTRIC MEMORIES;
POLARIZATION REVERSAL CURRENT;
RENAMENT POLARIZATION;
SCALING RULE;
STORAGE CAPACITANCE;
DATA STORAGE EQUIPMENT;
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EID: 0028737688
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (22)
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References (41)
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