Fabrications of ferroelectric-gate field-effect-transistors using P(L)ZT films

Journal of the Korean Physical Society

Volumn 29, Issue SUPPL. 3, 1996, Pages

  Tokumitsu, Eisuke ^a   Nakamura, Ryo Ichi ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030299594     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. J. L. Moll and Y. Tarui, IEEE Trans. Electron Devices 10 333 (1963).
2. Y. Tarui, Technical Digest of 1994 IEDM, 7 (1994).
3. H. Ishiwara, Jpn. J. Appl. Phys. 32, 442 (1993).
4. E. Tokumitsu, T. Shimamura and H. Ishiwara, to be published in Integrated Ferroelectrics.
5. Y. Shichi, S. Tanimoto, T. Goto, K. Kuroiwa and Y. Tarui, Jpn. J. Appl. Phys. 33, 5172 (1994).
6. E. Tokumitsu, K. Itani, B. K. Moon and H. Ishiwara, Jpn. J. Appl. Phys. 34, 5202 (1995).
7. D. R. Lampe, D. A. Adams, M. Austin, M. Polinsky, J. Dzimianski, S. Sinharoy, H. Buhay, P. Brabant and Y. M. Liu, Ferroelectrics 133, 61 (1992).
8. K. Aizawa, T. Ichiki, T. Okamoto, E. Tokumitsu and H. Ishiwara, Jpn. J. Appl. Phys. 35, 1525 (1996).
9. Y. Nakao, T. Nakamura, A. Kamisawa, and H. Takasu, Integrated Ferroelectrics 6, 231 (1995).