Fabrication and characterization of metal-ferroelectrics-semiconductor field effect transistors using epitaxial BaMgF4 films grown on Si(111) substrates

Integrated Ferroelectrics

Volumn 15, Issue 1-4, 1997, Pages 245-252

  Aizawa, Koji ^a   Okamoto, Tomoyuki ^a   Tokumitsu, Eisuke ^a   Ishihwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; FILM GROWTH; MESFET DEVICES; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SUBSTRATES;

BARIUM MAGNESIUM FLUORIDE; METAL FERROELECTRICS SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MFS FET);

DIELECTRIC FILMS;

EID: 7044222330     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708015715     Document Type: Article

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