Process integration of the ferroelectric memory fets (femfets) for ndro ferram

Ferroelectrics

Volumn 133, Issue 1, 1992, Pages 61-72

  Lampe, D R ^a   Adams, D A ^a   Austin, M ^a   Polinsky, M ^a   Dzimianski, J ^a   Buhay, H ^a   Brabant, P ^a   Liu, Y M ^a  

^a Advanced Technology Division Baltimore Md ^*  (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003070717     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150199208217977     Document Type: Article

References (4)

1. S. Y. Wu, A New Ferroelectric Memory Device: Metal-Ferroelectric-Semiconductor Transistor,” IEEE Trans. Electron Devices, Vol. ED-21, p. 499 (1974)
2. S. Sinharoy, H. Buhay, D. R. Lampe, M. H. Francombe, “BaMgF4 Thin Film Development and Processing for Ferroelectric FETs,” Proceedings of the Fourth International Symposium on Integrated Ferroelectrics, March 1992, Monterey, Calif., (to be published).
3. H. Buhay, S. Sinharoy, D. R. Lampe, D. A. Adams, M. H. Francombe, “Large-Area Pulsed Laser Deposition (PLD) Integration of Ferroelectric Bismuth Titanate Thin Films for FEMFET Applications,” Fourth International Symposium on Integrated Ferroelectrics, March 1992, Monterey, Calif.
4. M. H. Francombe, S. Sinharoy, H. Buhay, “Influence of Orientation Effects on Polarization Switching in Bismuth Titanate and Barium Magnesium Fluoride Films,” Fourth International Symposium on Integrated Ferroelectrics, March 1992, Monterey, Calif.