Influence of asymmetric/symmetric source/drain region on asymmetry and mismatch of CMOSFET's and circuit performance

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 529-537

  Ohzone, Takashi ^a   Miyakawa, Tetsu ^a   Matsuda, Toshihiro ^a   Yabu, Toshiki ^a   Odanaka, Shinji ^a  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

Asymmetry; Circuit performance; CMOSFET; Ion implantation; Mismatch; MOSFET; Ring oscillator

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; FREQUENCIES; ION IMPLANTATION; OSCILLATIONS; OSCILLATORS (ELECTRONIC); SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

RING OSCILLATORS;

MOSFET DEVICES;

EID: 0031996555     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658690     Document Type: Article

References (14)

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