IMPROVEMENT OF LDD MOSFET'S CHARACTERISTICS BY THE OBLIQUE-ROTATING ION IMPLANTATION.

Conference on Solid State Devices and Materials

Volumn , Issue , 1987, Pages 27-30

  Eimori, T ^a   Ozaki, H ^a   Oda, H ^a   Ohsaki, S ^a   Mitsuhashi, J ^a   Satoh, S ^a   Matsukawa, T ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - ION IMPLANTATION;

DRAIN CURRENT; HOT CARRIER GENERATION; INCIDENT ANGLE; LIGHTLY DOPED DRAIN (LDD) STRUCTURE; LOWERING DOSE; OBLIQUE-ROTATING ION IMPLANTATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023535931     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.7567/ssdm.1987.a-2-1     Document Type: Conference Paper

References (10)