The effect of a floating substrate on the operation of silicon-on-sapphire transistors

IEEE Transactions on Electron Devices

Volumn 25, Issue 8, 1978, Pages 907-912

  Eaton, S Sheffield ^a   Lalevic, Bogoljub ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR;

SOS;

TRANSISTORS;

EID: 0017905144     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1978.19200     Document Type: Article

References (7)

1. J. Tihanyi H. Schlotterer Properties of ESFI MOS transistors due to the floating substrate and finite volume IEEE Trans. Electron Devices ED-22 1017 1023 1975
2. J. Tihanyi H. Schlotterer Influence of the floating substrate potential on the characteristics of ESPI MOS transistors Solid-State Electron. 18 309 314 1975
3. S. Eaton B. Lalevic The effect of operating frequency on propagation delay in silicon-on-sapphire digital integrated circuits IEDM Meet., Dig. Tech. Papers (Washington, DC) 192 194 1976
4. D.J. Dumin Deep levels within the forbidden gap of silicon-on-sapphire rums Solid-State Electron. 13 415 424 1970
5. A. Goodman An investigation of the silicon-sapphire interface using the MIS capacitance method IEEE Trans. Electron Devices ED-22 63 65 1975
6. K. Lehovec R. Miller Investigation of the sapphire-silicon interface by transient current analysis IEDM Meet., Dig. Tech. Papers (Washington, DC) 283 286 1976
7. K.H. Zaininger F.P. Heiman The C- V technique as an analytical tool Solid State Technol., pp. 46 55 1970