Measurement of I—V Curves of Silicon-on-Insulator (SOI) MOSFET's Without Self-Heating

IEEE Electron Device Letters

Volumn 16, Issue 4, 1995, Pages 145-147

  Jenkins, K A ^a   Sun, J Y C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); RELAXATION PROCESSES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THERMAL EFFECTS;

REVERSE TRANSIENT LOADLINE CONSTRUCTION; SELF HEATING; SHORT PULSES;

MOSFET DEVICES;

EID: 0029291056     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.372496     Document Type: Article

References (6)

1. O. Le Néel and M. Haond, “Electrical transient study of negative resistance in SOI MOS transistors,” Electronic Letters. vol. 26, pp. 73–74, 1990.
2. P. G. Mautry and J. Trager, “Investigation of self-heating in VLSI and ULSI MOSFET's,” Proc. IEEE Conf. Microelectronic Test Structures. 1990, pp. 221–226.
3. L. J. McDaid, S. Hall, W. Eccleston, and J. C. Alderman, “Monitoring the temperature rise in SOI transistors by measurement of leakage current,” Proc. I991 IEEE Int. SOI/SOS Conf., 1991, pp. 28–29.
4. R.J. T. Bunyan, M. J. Uren, J. C. Alderman, and W. Eccleston, “Use of noise thermometry to study the effects of self-heating in submicrometer SOI MOSFET's, IEEE Electron Device Lett., vol. 13, pp. 279–281, 1992.
5. A. Caviglia and A. A. Ilidais, “A new method for characterizing dynamic self-heating in SOI MOSFETs,” Proc. IEEE Int. SOI Conf., 1992, pp. 118–119.
6. L. T. Su, J. E. Chung, D. A. Antoniadis, K. E. Goodson, and M.I. Flik, “Measurement and modeling of self-heating in SOI MOSFETs,” IEEE Trans. Electron Devices, vol. 41, pp. 69–75, 1994.