NUMERICAL ANALYSIS OF SWITCHING CHARACTERISTICS IN SOI MOSFET'S.

IEEE Transactions on Electron Devices

Volumn ED-33, Issue 1, 1986, Pages 133-139

  Kato, Koichi ^a   Taniguchi, Kenji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS, SWITCHING - TRANSIENTS; SUBSTRATES; WAVEFORM ANALYSIS;

DRAIN CURRENT OVERSHOOT; MAJORITY CARRIER MOTION; SILICON-ON-INSULATOR (SOI) DEVICES; SUBSTRATE POTENTIAL RECOVERY;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022471351     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/t-ed.1986.22449     Document Type: Article

References (9)