-
1
-
-
0342263385
-
The intervalley transfer mechanism of negative resistivity in bulk semiconductors
-
P. N. Butcher and W. Fawcett, “The intervalley transfer mechanism of negative resistivity in bulk semiconductors,” Proc. Phys. Soc., vol. 86, pp. 1205–1218, 1965.
-
(1965)
Proc. Phys. Soc.
, vol.86
, pp. 1205-1218
-
-
Butcher, P.N.1
Fawcett, W.2
-
2
-
-
84926901713
-
High-field distribution function in GaAs
-
January
-
E. M. Conwell and M. O. Vassell, “High-field distribution function in GaAs,” IEEE Trans. Electron Devices, vol. ED-13, pp. 22–27, January 1966.
-
(1966)
IEEE Trans. Electron Devices
, vol.ED-13
, pp. 22-27
-
-
Conwell, E.M.1
Vassell, M.O.2
-
3
-
-
0000803795
-
High-field transport in n-type GaAs
-
February
-
—, “High-field transport in n-type GaAs,” Phys. Rev., vol. 166, pp. 797–821, February 1968.
-
(1968)
Phys. Rev.
, vol.166
, pp. 797-821
-
-
Conwell, E.M.1
Vassell, M.O.2
-
4
-
-
84916467017
-
High-field distribution function in GaAs
-
L. Stenflo, “High-field distribution function in GaAs,” Proc. IEEE (Correspondence), vol. 54, p. 1970, 1966.
-
(1966)
Proc. IEEE (Correspondence)
, vol.54
, pp. 1970
-
-
Stenflo, L.1
-
5
-
-
36049056873
-
Hall effect of n-type GaAs in high electric fields
-
A. Zylbersztejn and J. B. Gunn, “Hall effect of n-type GaAs in high electric fields,” Phys. Rev., vol. 157, pp. 668–671, 1967.
-
(1967)
Phys. Rev.
, vol.157
, pp. 668-671
-
-
Zylbersztejn, A.1
Gunn, J.B.2
-
6
-
-
0346872785
-
High-frequency conductivity, carrier waves, and acoustic amplification in drifted semiconductor plasmas
-
October
-
K. Bløtekjær, “High-frequency conductivity, carrier waves, and acoustic amplification in drifted semiconductor plasmas,” Ericsson Technics, vol. 22, pp. 125–183, October 1966.
-
(1966)
Ericsson Technics
, vol.22
, pp. 125-183
-
-
Bløtekjær, K.1
-
7
-
-
84984134056
-
Collision integrals for displaced Maxwellian distributions
-
October
-
K. Bløtekjær and E. B. Lunde, “Collision integrals for displaced Maxwellian distributions,” Physica Status Solidi, vol. 35, pp. 581–592, October 1969.
-
(1969)
Physica Status Solidi
, vol.35
, pp. 581-592
-
-
Bløtekjær, K.1
Lunde, E.B.2
-
8
-
-
36849112416
-
Hot electron relaxation times in two-valley semiconductors and their effect on bulk-microwave oscillators
-
December
-
P. Das and R. Bharat, “Hot electron relaxation times in two-valley semiconductors and their effect on bulk-microwave oscillators,” Appl. Phys. Letters, vol. 11, pp. 386–388, December 1967
-
(1967)
Appl. Phys. Letters
, vol.11
, pp. 386-388
-
-
Das, P.1
Bharat, R.2
-
9
-
-
84935409507
-
Waves in semiconductors with nonconstant mobility
-
August
-
K. Bløtekjær, “Waves in semiconductors with nonconstant mobility,” Electronics Letters, vol. 4, pp. 357–358, August 1968.
-
(1968)
Electronics Letters
, vol.4
, pp. 357-358
-
-
Bløtekjær, K.1
-
10
-
-
0347381393
-
Transport of electrons in a strong built-in electric field
-
September
-
J. B. Gunn, “Transport of electrons in a strong built-in electric field,” J. Appl. Phys., vol. 39, pp. 4602–4604, September 1968.
-
(1968)
J. Appl. Phys.
, vol.39
, pp. 4602-4604
-
-
Gunn, J.B.1
-
11
-
-
33845945779
-
Concerning one model in the theory of the Gunn effect
-
S. I. Anisimov, V. I. Mell'nikov, and E. I. Rashba, “Concerning one model in the theory of the Gunn effect,” JETP Letters, vol. 7, pp. 196–198, 1968.
-
(1968)
JETP Letters
, vol.7
, pp. 196-198
-
-
Anisimov, S.I.1
Mell'nikov, V.I.2
Rashba, E.I.3
-
12
-
-
0039571829
-
Theory of negative-conductance amplification and of Gunn instabilities in ‘two-valley’ semiconductors
-
January
-
D. E. McCumber and A. G. Chynoweth, “Theory of negative-conductance amplification and of Gunn instabilities in ‘two-valley’ semiconductors,” IEEE Trans. Electron Devices, vol. ED-13, pp. 4–21, January 1966.
-
(1966)
IEEE Trans. Electron Devices
, vol.ED-13
, pp. 4-21
-
-
McCumber, D.E.1
Chynoweth, A.G.2
-
13
-
-
84935409059
-
The effect of non-uniform conductivity on the behavior of Gunn effect samples
-
Texas Instruments Inc., Dallas, Tex., Rept.
-
T. E. Hasty, R. Stratton, and E. L. Jones, “The effect of non-uniform conductivity on the behavior of Gunn effect samples,” Texas Instruments Inc., Dallas, Tex., Rept.
-
-
-
Hasty, T.E.1
Stratton, R.2
Jones, E.L.3
-
14
-
-
84935408821
-
Non-isothermal effects in bulk GaAs transit-time-mode oscillators
-
D. C. Hanson and J. E. Rowe, “Non-isothermal effects in bulk GaAs transit-time-mode oscillators,” Internatl. J. Electronics, vol. 24, pp. 415–426, 1968.
-
(1968)
Internatl. J. Electronics
, vol.24
, pp. 415-426
-
-
Hanson, D.C.1
Rowe, J.E.2
-
15
-
-
84932431152
-
Nonisothermal waves on charge carrier streams
-
January
-
J. E. Carroll, “Nonisothermal waves on charge carrier streams,” IEEE Trans. Electron Devices (Correspondence), vol. ED-13, pp. 187–189, January 1966.
-
(1966)
IEEE Trans. Electron Devices (Correspondence)
, vol.ED-13
, pp. 187-189
-
-
Carroll, J.E.1
-
16
-
-
36149074109
-
Transport of hot injected plasmas in semiconductors
-
October
-
A. K. Jonscher, “Transport of hot injected plasmas in semiconductors,” Proc. Phys. Soc., vol. 84, pp. 767–779, October 1964.
-
(1964)
Proc. Phys. Soc.
, vol.84
, pp. 767-779
-
-
Jonscher, A.K.1
-
17
-
-
0346677607
-
The inhibition of negative resistance dipole waves and domains in n-GaAs
-
January
-
B. K. Ridley, “The inhibition of negative resistance dipole waves and domains in n-GaAs,” IEEE Trans. Electron Devices, vol. ED-13, pp. 41–43, January 1966.
-
(1966)
IEEE Trans. Electron Devices
, vol.ED-13
, pp. 41-43
-
-
Ridley, B.K.1
-
18
-
-
84983863091
-
Theoretical efficiency of the l.s.a. mode for gallium arsenide at frequencies above 10 GHz
-
October
-
P. N. Butcher and C. J. Hearn, “Theoretical efficiency of the l.s.a. mode for gallium arsenide at frequencies above 10 GHz,” Electronics Letters, vol. 4, pp. 459–461, October 1968.
-
(1968)
Electronics Letters
, vol.4
, pp. 459-461
-
-
Butcher, P.N.1
Hearn, C.J.2
-
19
-
-
84932848117
-
A limitation on frequency of Gunn effect due to the intervalley scattering time
-
October
-
T. Ohmi, “A limitation on frequency of Gunn effect due to the intervalley scattering time,” Proc. IEEE (Letters), vol. 55, pp. 1739–1740, October 1967.
-
(1967)
Proc. IEEE (Letters)
, vol.55
, pp. 1739-1740
-
-
Ohmi, T.1
-
20
-
-
84935411491
-
Effect of the intervalley scattering time on LSA oscillations
-
April
-
T. Ohmi, K. Murayama, and H. Kanbe, “Effect of the intervalley scattering time on LSA oscillations,” Proc. IEEE (Letters), vol. 56, pp. 747–748, April 1968.
-
(1968)
Proc. IEEE (Letters)
, vol.56
, pp. 747-748
-
-
Ohmi, T.1
Murayama, K.2
Kanbe, H.3
-
21
-
-
84968233609
-
Intervalley scattering model of the Gunn domain
-
December
-
V. Székely and K. Tarnay, “Intervalley scattering model of the Gunn domain,” Electronics Letters, vol. 4, pp. 592–594, December 1968.
-
(1968)
Electronics Letters
, vol.4
, pp. 592-594
-
-
Székely, V.1
Tarnay, K.2
|