Coupled thermal-fully hydrodynamic simulation of InP-based HBTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 737-740

  Benvenuti, A ^a   Ghione, G ^a   Pinto, M R ^a,b   Coughran, W M ^a,b   Schryer, N L ^a,b  

^a POLITECNICO DI TORINO   (Italy)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HYDRODYNAMICS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTRICAL BEHAVIORS; HETEROJUNCTION BIPOLAR TRANSISTOR (HBTS); HYDRODYNAMIC MODEL; HYDRODYNAMIC SIMULATION; SOFTWARE APPROACH; UPWINDING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84910915002     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307464     Document Type: Conference Paper

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