A new set of semiconductor equations for computer simulation of submicron devices

Solid State Electronics

Volumn 28, Issue 8, 1985, Pages 783-788

  Wang, Cheng T ^a  

^a UNIVERSITY OF MIAMI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; ELECTRONS - TRANSPORT PROPERTIES; SEMICONDUCTOR DEVICES, FIELD EFFECT - COMPUTER SIMULATION; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

CARRIER TRANSPORT EFFECTS; EQUATIONS SET; SUBMICRON DEVICES;

SEMICONDUCTOR DEVICES;

EID: 0022114039     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(85)90065-6     Document Type: Article

References (58)

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3. Mesostructure electronics
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5. Electron dynamics in short channel field-effect transistors
6. A review of some charge transport properties of silicon
7. Transport equations for electrons in two-valley semiconductors
8. Application of Monte Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting components
9. Diffusion effects and "Ballistic transport"
10. Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's
11. Two-dimensional particle modeling of submicrometer gate GaAs FET's near pinchoff
12. Time-dependent carrier flow in a transistor structure under nonisothermal conditions
13. Two-dimensional nonisothermal carrier flow in a transistor structure under reactive circuit conditions
14. Dielectric Breakdown in Solids
15. The Influence of Interelectronic Collisions on Conduction and Breakdown in Polar Crystals
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17. Statistics of the Recombinations of Holes and Electrons
18. Minority carrier generation time and surface generation velocity determination from Q-t measurements
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20. The concept of generation and recombination lifetimes in semiconductors
21. Bandgap narrowing in moderately to heavily doped silicon
22. Transport equations in heavy doped silicon
23. A numerical model of avalanche breakdown in MOSFET's
24. Analysis of Breakdown Phenomena in MOSFET's