An Improved Energy Transport Model Including Nonparabolicity and Non-Maxwellian Distribution Effects

IEEE Electron Device Letters

Volumn 13, Issue 1, 1992, Pages 26-28

  Chen, Datong ^a   Kan, Edwin C ^b   Ravaioli, Umberto ^c   Shu, Chi Wang ^c   Dutton, Robert W ^c  

^a STANFORD UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c BROWN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; RELAXATION PROCESSES; SEMICONDUCTOR DEVICES, MOSFET; SEMICONDUCTOR DIODES;

BALLISTIC DIODES; BOLTZMANN TRANSPORT EQUATION; ENERGY BAND NONPARABOLICITY; ENERGY TRANSPORT MODEL; NON-MAXWELLIAN DISTRIBUTION;

ELECTRONS;

EID: 0026735256     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.144940     Document Type: Article

References (10)

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