Modelling thermal effects in energy models of carrier transport in semiconductors

Semiconductor Science and Technology

Volumn 3, Issue 8, 1988, Pages 758-765

  McAndrew, C C ^a   Heasell, E L ^a   Singhal, K ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007880251     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/3/8/005     Document Type: Article

References (21)

1. A self-consistent iterative scheme for one-dimensional steady state transistor calculations
2. Three-Dimensional Simulation of VLSI MOSFET's: The Three-Dimensional Simulation Program WATMOS
3. Transport equations for electrons in two-valley semiconductors
4. Computer simulation of transferred electron devices using the displaced Maxwellian approach
5. Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's
6. Accurate calculations of the forward drop and power dissipation in thyristors
7. Time-dependent carrier flow in a transistor structure under nonisothermal conditions