A Critical Examination of the Assumptions Underlying Macroscopic Transport Equations for Silicon Devices

IEEE Transactions on Electron Devices

Volumn 40, Issue 4, 1993, Pages 733-740

  Stettler, Mark A ^a   Alani, Muhammad A ^a   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; TRANSPORT PROPERTIES;

BOLTZMANN EQUATION; ELECTRON TEMPERATURE;

SEMICONDUCTOR DIODES;

EID: 0027574577     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.202785     Document Type: Article

References (25)

1. M.V. Fischetti and S.E. Laux, “A Monte Carlo analysis of electron transport in small semiconductor devices including bandstructure and space-charge effects,” Phys. Rev. B, vol. 38, pp. 9721–9745, 1988.
2. R.K. Cook, “Numerical simulation of hot-carrier transport in silicon bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1103–1110, 1983.
3. B. Meinerzhagen and W.L. Engl, “The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors,” IEEE Trans. Electron Devices, vol. 35, pp. 689–697, 1988.
4. A. Forghieri, R. Guerrieri, P. Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani, “A new discretization strategy of the semiconductor equations comprising momentum and energy balance,” IEEE Trans. Computer-Aided Des., vol. 7, pp. 231–242, 1988.
5. C.C. McAndrew, E.L. Heasell, and K. Singhal. “A comprehensive transport model for semiconductor device simulation,” Semicond. Sci. Technol., vol. 2, pp. 643–648, 1987.
6. R. Thoma, A. Emunds, B. Meinerzhagen, H.J. Peifer, and W.L. Engl, “Hydrodynamic equations for semiconductors with nonparabolic band structure,” IEEE Trans. Electron Devices, vol. 38. pp. 1343–1353, 1991.
7. E.E. Kunhardt, M. Cheng, and C. Wu, “Nonequilibrium macroscopic models of carrier dynamics in a semiconductor,” J. Appl. Phys., vol. 64, pp. 1220–1228, 1988.
8. T. Portengen, H.M.J. Boots, and M.F.H. Schuurmans, “A priori incorporation of ballistic and heating effects in a four-moment approach to the Boltzmann equation,” J. Appl. Phys., vol. 68, pp. 2817–2823, 1990.
9. A. Das and M.S. Lundstrom, “A scattering matrix approach to device analysis,” Solid-Stale Electron., vol. 33, pp. 1299–1307, 1990.
10. M.A. Stettler and M.S. Lundstrom, “Self-consistent scattering matrix calculation of the distribution function in semiconductor devices,” Appl. Phys. Lett., vol. 60, pp. 2908–2910, June 1992.
11. M.A. Alain, M.A. Stettler. and M.S. Lundstrom, “Formulation of the Boltzmann equation in terms of scattering matrices,” accepted for publication in Solid-Stale Electron.
12. C. Jacoboni and L. Reggiani, “The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials,” Rev. Mod. Phys., vol. 55, pp. 645–705, 1983.
13. M. Shur, “Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors,” Electron. Lett., vol. 12, pp. 615–616, 1976.
14. J.B. Gunn, “Transport of electrons in a strong built-in electric field,” J. Appl. Phys., vol. 39, pp. 4602–4604, 1968.
15. S.C. Lee and T.W. Tang, “Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte Carlo calculations,” Solid State Electron., vol. 35, pp. 561–569, 1992.
16. W. Hansch and M. MiurAMattausch, “The hot-electron problem in small semiconductor devices,” J. Appl. Phys., vol. 60, pp. 650–656, 1986.
17. D.L. Woolard, R.J. Trew, and M.A. Littlejohn, “Hydrodynamic hot-electron transport model with Monte Carlo-generated transport parameters,” Solid State Electron., vol. 31, pp. 571–574, 1988.
18. R.L. Liboff, Introduction to the Theory of Kinetic Equations. New York: Wiley, 1969.
19. P.A. Libby and K.N.C. Bray, “Countergradient diffusion in pre-mixed turbulent flames,” AIAA J., vol. 19, pp. 205–213, 1981.
20. A.C. Smith, J. Janak, and R. Adler, Electronic Conduction in Solids. New York: McGraw-Hill, 1965.
21. A. Gnudi, F. Odeh, and M. Rudan, “Investigation of non-local transport phenomena in small semiconductor devices,” European Trans. Telecomin., vol. 1, pp. 307–313, 1990.
22. N. Goldsman and J. Frey, “Efficient and accurate use of the energy transport method in device simulation,” IEEE Trans. Electron Devices, vol. 35, pp. 1524–1529, 1988.
23. W. Hansch, The Drift-Diffusion Equation and Its Applications in MOSFET Modeling. New York: Springer-Verlag, 1991.
24. D. Chen, E.C. Kan, U. Ravaioli, C.W. Shu, and R.W. Dutton, “An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects,” IEEE Electron Device Lett., vol. 13, pp. 26–28, 1992.
25. A.H. Marshak and C.M. van Vliet, “Electrical current and carrier density in degenerate materials with nonuniform bandstructure,” Proc. IEEE, vol. 72, pp. 148–164, 1984.