A High-Power GaAs FET Having Buried Plated Heat Sink for High-Performance MMIC’s

IEEE Transactions on Electron Devices

Volumn 41, Issue 1, 1994, Pages 3-9

  Ishikawa, Takahide ^a   Okaniwa, Kazuhiro ^a   Komaru, Makio ^a   Kosaki, Katsuya ^a   Mitsui, Yasuo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005773512     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.259613     Document Type: Article

References (10)

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2. P. Briere, E. Perea, and O. de Saint Leger, “System and technology aspects of future digital cellular phones in Europe,” in 1991 IEEE GaAs IC Symp. Tech. Dig., Oct. 1991, pp. 33-36.
3. T. Takagi, K. Seino, T. Kashiwa, T. Hashimoto, and F. Takeda, “A millimeter-water monolithic high power amplifier using a novel tandem FET,” in IEICE Trans. Electron., vol. E75-C, 1992, No. 6, pp. 669-673.
4. O. C. Zienkiewicz and R. L. Taylor, The Finite Element Method. Volume 1. New York: McGraw-Hill, 1989, 4th ed.
5. I. Babuska, O. C. Zienkiewicz, J. Gago, and E. R. de A. Oliveira, Accuracy Estimates and Adaptive Refinements in Finite Element Computations. New York: Wiley, 1986.
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7. M. Nakayama, H. Miyajima, R. Nakai, J. Yamaguchi, K. Koe, and S. Nishine, “Evaluation of the GaAs Process Deformation layer,” in Sumitomo Denki, no. 132, pp. 111-117, Mar. 1988.
8. K. Sumitani, M. Komaru, M. Kobiki, Y. Mitsui, H. Takano, and K. Nishitani, “A high aspect ratio via hole dry etching technology for high power GaAs MESFET,” in 1989 IEEE GaAs IC Symp. Tech. Dig., Oct. 1989, pp. 207-210.
9. G. C. Taylor, D. W. Bechtle, P. C. Jozwiak, S. G. Liu, and R. L. Camisa, “Novel selective plated heatsink, key to compact 2 Watt MMIC amplifier,” SPIE, vol. 1475, pp. 103-112, 1991.
10. J. S. Pavio, “Successful alloy attachment of GaAs MMIC’s,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp. 1507-1511, Dec. 1987.