Energy-momentum transport model suitable for small geometry silicon device simulation

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

Volumn 9, Issue 1, 1990, Pages 1-22

  roberts, James W ^a   chamberlain, Savvas G ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS; SEMICONDUCTING SILICON;

ENERGY-MOMENTUM TRANSPORT MODEL; SILICON DEVICES;

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0025399914     PISSN: 03321649     EISSN: None     Source Type: Journal    
DOI: 10.1108/eb010322     Document Type: Review

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