Thermal Design Studies of High-Power Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 36, Issue 5, 1989, Pages 854-863

  Gao, Guang Bo ^a   Wang, Ming Zhu ^a   Gui, Xiang ^a   Morkoc, Hadis ^b  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; TRANSISTORS--DESIGN;

GALLIUM ALUMINUM ARSENIDE; POWER BIPOLAR TRANSISTORS; THERMAL DESIGN;

TRANSISTORS, BIPOLAR;

EID: 0024665142     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.299666     Document Type: Article

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