메뉴 건너뛰기




Volumn 31, Issue 12, 1984, Pages 1878-1888

The Physics and Modeling of Heavily Doped Emitters

Author keywords

[No Author keywords available]

Indexed keywords


EID: 30244448020     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21805     Document Type: Article
Times cited : (127)

References (73)
  • 1
    • 33646941073 scopus 로고
    • Diffused emitters and base silicon transistors
    • M. Tanenbaum and D. E. Thomas, “Diffused emitters and base silicon transistors,” Bell Syst. Tech. J., vol. 35, no. 1, pp. 1–22, 1956.
    • (1956) Bell Syst. Tech. J. , vol.35 , Issue.1 , pp. 1-22
    • Tanenbaum, M.1    Thomas, D.E.2
  • 2
    • 0020275804 scopus 로고
    • The role of the interfacial layer in polysilicon emitter bipolar transistors
    • A. A. Eltoukhy and D. J. Roulston “The role of the interfacial layer in polysilicon emitter bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-29, no. 12, pp. 1862–1869, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , Issue.12 , pp. 1862-1869
    • Eltoukhy, A.A.1    Roulston, D.J.2
  • 4
    • 84941525342 scopus 로고
    • Technology and performance of SIPOS heterojunction contacts
    • presented at the Device Res. Conf., Fort Collins, CO.
    • Y. H. Kwark and R. M. Swanson, “Technology and performance of SIPOS heterojunction contacts,” presented at the Device Res. Conf., Fort Collins, CO, 1982.
    • (1982)
    • Kwark, Y.H.1    Swanson, R.M.2
  • 5
    • 0019589516 scopus 로고
    • The physics of heavily doped n+ -p junction solar cells
    • H. P. D. Lanyon “The physics of heavily doped n+ -p junction solar cells,” Solar Cells, vol. 3, pp. 289–311, 1981.
    • (1981) Solar Cells , vol.3 , pp. 289-311
    • Lanyon, H.P.D.1
  • 7
    • 84918225388 scopus 로고
    • Injection efficiency in double diffused transistors
    • M. Klein, “Injection efficiency in double diffused transistors,” Proc. IEEE, vol. 49, no. 11, p. 1708, 1961.
    • (1961) Proc. IEEE , vol.49 , Issue.11 , pp. 1708
    • Klein, M.1
  • 8
    • 0019033950 scopus 로고
    • A new solution for minority-carrier injection into the emitter of bipolar transistor
    • R. Amantea “A new solution for minority-carrier injection into the emitter of bipolar transistor,” IEEE Trans. Electron Devices, vol. ED-27, no. 7, pp. 1231–1238, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.7 , pp. 1231-1238
    • Amantea, R.1
  • 9
    • 84918184412 scopus 로고
    • Minority-carrier injection characteristics of the diffused emitter junction
    • D. P. Kennedy and P. C. Murley “Minority-carrier injection characteristics of the diffused emitter junction,” IEEE Trans. Electron Devices, vol. ED-9, no. 3, pp. 136–142, 1962.
    • (1962) IEEE Trans. Electron Devices , vol.ED-9 , Issue.3 , pp. 136-142
    • Kennedy, D.P.1    Murley, P.C.2
  • 10
    • 0019527646 scopus 로고
    • Minority carrier injection and storage into a heavily doped emitter. Approximate solution for Auger recombination
    • W. P. Dumke “Minority carrier injection and storage into a heavily doped emitter. Approximate solution for Auger recombination,” Solid-State Electron., vol. 24, pp. 155–157, 1981.
    • (1981) Solid-State Electron. , vol.24 , pp. 155-157
    • Dumke, W.P.1
  • 11
    • 0015143255 scopus 로고
    • The influence of heavy doping on the emitter efficiency of a bipolar transistor
    • H. J. J. De Man “The influence of heavy doping on the emitter efficiency of a bipolar transistor,” IEEE Trans. Electron Devices, vol. ED-18, no. 10, pp. 833–835, 1971.
    • (1971) IEEE Trans. Electron Devices , vol.ED-18 , Issue.10 , pp. 833-835
    • de Man, H.J.J.1
  • 12
    • 0016431189 scopus 로고
    • The effect of Auger recombination on the emitter injection efficiency of bipolar transistors
    • W. W. Sheng “The effect of Auger recombination on the emitter injection efficiency of bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-22, no. 1, pp. 25–27, 1975.
    • (1975) IEEE Trans. Electron Devices , vol.ED-22 , Issue.1 , pp. 25-27
    • Sheng, W.W.1
  • 13
    • 79957997501 scopus 로고
    • Auger recombination in heavily doped shallow-emitter silicon p-n junction solar cells, diodes, and transistors
    • and correction in IEEE Trans. Electron Devices, vol. ED-26, no. 12, p. 1978, 1979.
    • M. A. Shibib, F. A. Lindholm, and J. G. Fossum, “Auger recombination in heavily doped shallow-emitter silicon p-n junction solar cells, diodes, and transistors,” IEEE Trans. Electron Devices, vol. ED-26, no. 7, pp. 1104–1106, 1979, and correction in IEEE Trans. Electron Devices, vol. ED-26, no. 12, p. 1978, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , Issue.7 , pp. 1104-1106
    • Shibib, M.A.1    Lindholm, F.A.2    Fossum, J.G.3
  • 14
    • 0018479757 scopus 로고
    • Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors
    • M. A. Shibib, F. A. Lindholm, and F. Therez “Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors,” IEEE Trans. Electron Devices, vol. ED-26, no. 6, pp. 959–965, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , Issue.6 , pp. 959-965
    • Shibib, M.A.1    Lindholm, F.A.2    Therez, F.3
  • 16
    • 0019058580 scopus 로고
    • Current gain of the bipolar transistor
    • C.-Y. Wu “Current gain of the bipolar transistor,” J. Appl. Phys., vol. 51, no. 9, pp. 5030–5037, 1980.
    • (1980) J. Appl. Phys. , vol.51 , Issue.9 , pp. 5030-5037
    • Wu, C.-Y.1
  • 17
    • 0019608018 scopus 로고
    • An analytical model for minority-carrier carrier transport in heavily doped regions of silicon devices
    • J. G. Fossum and M. A. Shibib “An analytical model for minority-carrier carrier transport in heavily doped regions of silicon devices,” IEEE Trans. Electron Devices, vol. ED-28, no. 9, pp. 1018–1025, 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , Issue.9 , pp. 1018-1025
    • Fossum, J.G.1    Shibib, M.A.2
  • 18
    • 0016092680 scopus 로고
    • On heavy doping effects and the injection efficiency of silicon transistors
    • M. S. Mock, “On heavy doping effects and the injection efficiency of silicon transistors,” Solid-State Electron., vol. 17, pp. 819–824, 1974.
    • (1974) Solid-State Electron. , vol.17 , pp. 819-824
    • Mock, M.S.1
  • 20
    • 0017521187 scopus 로고
    • Theoretical effects of surface diffused region lifetime models on silicon solar cells
    • P. M. Dunbar and J. R. Hauser “Theoretical effects of surface diffused region lifetime models on silicon solar cells,” Solid-State Electron., vol. 20, pp. 697–701, 1977.
    • (1977) Solid-State Electron. , vol.20 , pp. 697-701
    • Dunbar, P.M.1    Hauser, J.R.2
  • 22
    • 0018547329 scopus 로고
    • One-dimensional device model of the npn bipolar transistor including heavy doping effects under Fermi statistics
    • A. Nakagawa “One-dimensional device model of the npn bipolar transistor including heavy doping effects under Fermi statistics,” Solid-State Electron., vol. 22, pp. 943–949, 1979.
    • (1979) Solid-State Electron. , vol.22 , pp. 943-949
    • Nakagawa, A.1
  • 23
    • 0019290449 scopus 로고
    • Verification of heavy doping parameters in semiconductor device modeling
    • Dec.
    • S. P. Gaur, G. R. Srinivasan, and I. Antipov, “Verification of heavy doping parameters in semiconductor device modeling,” inIEDM Tech. Dig., pp. 276–279, Dec. 1980.
    • (1980) IEDM Tech. Dig. , pp. 276-279
    • Gaur, S.P.1    Srinivasan, G.R.2    Antipov, I.3
  • 24
    • 0019569495 scopus 로고
    • Analysis of high-efficiency silicon solar cells
    • H. T. Weaver and R. D. Nasby “Analysis of high-efficiency silicon solar cells,” IEEE Trans. Electron Devices, vol. ED-28, no. 5, pp. 465–472, 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , Issue.5 , pp. 465-472
    • Weaver, H.T.1    Nasby, R.D.2
  • 25
    • 0019609842 scopus 로고
    • Achieving accuracy in transistor and thyristor modeling
    • M. S. Adler and G. E. Possin “Achieving accuracy in transistor and thyristor modeling,” IEEE Trans. Electron Devices, vol. ED-28, no. 9, pp. 1053–1059, 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , Issue.9 , pp. 1053-1059
    • Adler, M.S.1    Possin, G.E.2
  • 26
    • 0015659684 scopus 로고
    • Calculation of the emitter efficiency of bipolar transistors
    • R. P. Mertens, H. J. De Man, and R. J. V. Overstraeten “Calculation of the emitter efficiency of bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-20, no. 9, pp. 772–778, 1973.
    • (1973) IEEE Trans. Electron Devices , vol.ED-20 , Issue.9 , pp. 772-778
    • Mertens, R.P.1    de Man, H.J.2    Overstraeten, R.J.V.3
  • 28
    • 0015592391 scopus 로고
    • The violet cell: An improved silicon solar cell
    • J. Lindmayer, and J. F. Allison “The violet cell: An improved silicon solar cell,” COMSAT Tech. Rev., vol. 3, pp. 1–21, 1973.
    • (1973) COMSAT Tech. Rev. , vol.3 , pp. 1-21
    • Lindmayer, J.1    Allison, J.F.2
  • 29
    • 0018738441 scopus 로고
    • Silicon p-n junction photodiodes sensitive to ultraviolet radiation
    • H. Ouchi, T. Mukai, T. Kamei, and M. Okamura “Silicon p-n junction photodiodes sensitive to ultraviolet radiation,” IEEE Trans. Electron Devices, vol. ED-26, no. 12, pp. 1965–1969, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , Issue.12 , pp. 1965-1969
    • Ouchi, H.1    Mukai, T.2    Kamei, T.3    Okamura, M.4
  • 30
    • 0016562232 scopus 로고
    • Simulation de cellules solaries au silicium et comparaison avec des résultats expérimentaux
    • J. Michel and A. Mircea “Simulation de cellules solaries au silicium et comparaison avec des résultats expérimentaux,” Acta Electronica, vol. 18, no. 4, pp. 311–330, 1975.
    • (1975) Acta Electronica , vol.18 , Issue.4 , pp. 311-330
    • Michel, J.1    Mircea, A.2
  • 31
    • 0003611644 scopus 로고
    • Spectral response limitation mechanisms of a shallow junction n+ -p photodiode
    • S. G. Chamberlain, D. J. Roulston, and S. P. Desai “Spectral response limitation mechanisms of a shallow junction n+ -p photodiode,” diode,” IEEE Trans. Electron Devices, vol. ED-25, no. 2, pp. 241–246, 1978.
    • (1978) diode,” IEEE Trans. Electron Devices , vol.ED-25 , Issue.2 , pp. 241-246
    • Chamberlain, S.G.1    Roulston, D.J.2    Desai, S.P.3
  • 32
    • 0019612290 scopus 로고
    • Recombination properties of a diffused pn junction determined by spectral response measurements
    • M. Conti, P. Ferrari, and A. Modelli “Recombination properties of a diffused pn junction determined by spectral response measurements,” Solid-State Electron., vol. 24, no. 9, pp. 879–881, 1981.
    • (1981) Solid-State Electron. , vol.24 , Issue.9 , pp. 879-881
    • Conti, M.1    Ferrari, P.2    Modelli, A.3
  • 33
    • 0019912104 scopus 로고
    • Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell
    • C.-T. Ho “Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell,” J. Appl. Phys., vol. 53, no. 1, pp. 507–513, 1982.
    • (1982) J. Appl. Phys. , vol.53 , Issue.1 , pp. 507-513
    • Ho, C.-T.1
  • 34
    • 0020089607 scopus 로고
    • Modeling and measurement of minority-carrier lifetime versus doping in diffused layers of n+ -p silicon diodes
    • D. J. Roulston, N. D. Arora, and S. G. Chamberlain “Modeling and measurement of minority-carrier lifetime versus doping in diffused layers of n+ -p silicon diodes,” IEEE Trans. Electron Devices, vol. ED-29, no. 2, pp. 284–291, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , Issue.2 , pp. 284-291
    • Roulston, D.J.1    Arora, N.D.2    Chamberlain, S.G.3
  • 35
    • 0019601448 scopus 로고
    • Surface recombination effects on the performance of n+ p step and diffused junction silicon solar cells
    • J. D. Arora, S. N. Singh, and P. C. Mathur, “Surface recombination effects on the performance of n+ p step and diffused junction silicon solar cells,” Solid-State Electron., vol. 24, no. 8, pp. 739–747, 1981.
    • (1981) Solid-State Electron. , vol.24 , Issue.8 , pp. 739-747
    • Arora, J.D.1    Singh, S.N.2    Mathur, P.C.3
  • 36
    • 36749111159 scopus 로고
    • Silicon photodiode front region collection efficiency models
    • J. Geist “Silicon photodiode front region collection efficiency models,” J. Appl. Phys., vol. 51, no. 7, pp. 3993–3995, 1980.
    • (1980) J. Appl. Phys. , vol.51 , Issue.7 , pp. 3993-3995
    • Geist, J.1
  • 37
    • 0017014216 scopus 로고
    • Measurements of bandgap narrowing in Si bipolar transistors
    • J. W. Slotboom and H. C. deGraaff “Measurements of bandgap narrowing in Si bipolar transistors,” Solid-State Electron., vol. 19, pp. 857–862, 1976.
    • (1976) Solid-State Electron. , vol.19 , pp. 857-862
    • Slotboom, J.W.1    deGraaff, H.C.2
  • 38
    • 0017483048 scopus 로고
    • Base current of I2 L transistors
    • H. E. J. Wulms “Base current of I2 L transistors,” IEEE J. Solid-State State Circuits, vol. SC-12, no. 2, pp. 143–150, 1977.
    • (1977) IEEE J. Solid-State State Circuits , vol.SC-12 , Issue.2 , pp. 143-150
    • Wulms, H.E.J.1
  • 39
    • 0017480744 scopus 로고
    • A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices
    • F. A. Lindholm, A. Neugroschel, C.-T. Sah, M. P. Godlewski, and H. W. Brandhorst, Jr. “A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices,” IEEE Trans. Electron Devices, vol. ED-24, no. 4, pp. 402–410, 1977.
    • (1977) IEEE Trans. Electron Devices , vol.ED-24 , Issue.4 , pp. 402-410
    • Lindholm, F.A.1    Neugroschel, A.2    Sah, C.-T.3    Godlewski, M.P.4    Brandhorst, H.W.5
  • 40
    • 0019021080 scopus 로고
    • Measurement of heavy41. doping parameters in silicon by electron-beam-induced current
    • G. E. Possin, M. S. Adler, and B. J. Baliga, “Measurement of heavy41. doping parameters in silicon by electron-beam-induced current,” IEEE Trans. Electron Devices, vol. ED-27, no. 5, pp. 983–990, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.5 , pp. 983-990
    • Possin, G.E.1    Adler, M.S.2    Baliga, B.J.3
  • 41
    • 0018996594 scopus 로고
    • Heavy doping effects in p-n-p bipolar transistors
    • D. D. Tang “Heavy doping effects in p-n-p bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-27, no. 3, pp. 563–570, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.3 , pp. 563-570
    • Tang, D.D.1
  • 42
    • 0019045364 scopus 로고
    • Emitter effects in shallow bipolar devices: Measurements and consequences
    • A. W. Wieder “Emitter effects in shallow bipolar devices: Measurements and consequences,” IEEE Trans. Electron Devices, vol. ED-27, no. 8, pp. 1402–1408, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.8 , pp. 1402-1408
    • Wieder, A.W.1
  • 43
    • 0019021079 scopus 로고
    • Measurement of the minority-carrier transport parameters in heavily doped silicon
    • R. P. Mertens, J. L. Van Meerbergen, J. F. Nijs, and R. J. V. Overstraeten, “Measurement of the minority-carrier transport parameters in heavily doped silicon,” IEEE Trans. Electron Devices, vol. ED-27, no. 5 pp. 949–955, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.5 , pp. 949-955
    • Mertens, R.P.1    van Meerbergen, J.L.2    Nijs, J.F.3    Overstraeten, R.J.V.4
  • 44
    • 84941491330 scopus 로고
    • private communication, Sept.
    • R. P. Mertens, private communication, Sept. 1982.
    • (1982)
    • Mertens, R.P.1
  • 45
    • 0020766903 scopus 로고
    • Carrier recombination and lifetime in highly doped silicon
    • J. G. Fossum, R. P. Mertens, D. S. Lee, and J. F. Nijs “Carrier recombination and lifetime in highly doped silicon,” Solid-State Electron., vol. 26, no. 6, pp. 569–576, 1983.
    • (1983) Solid-State Electron. , vol.26 , Issue.6 , pp. 569-576
    • Fossum, J.G.1    Mertens, R.P.2    Lee, D.S.3    Nijs, J.F.4
  • 46
    • 0020127068 scopus 로고
    • A method for determining energy gap narrowing in highly doped semiconductors
    • A. Neugroschel, S. C. Pao, and F. A. Lindholm, “A method for determining energy gap narrowing in highly doped semiconductors,” IEEE Trans. Electron Devices, vol. ED-29, no. 5, pp. 894–902, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , Issue.5 , pp. 894-902
    • Neugroschel, A.1    Pao, S.C.2    Lindholm, F.A.3
  • 47
    • 84911794037 scopus 로고
    • Comments on ‘A method for determining energy gap narrowing in highly doped semiconductors,’
    • J. A. del Alamo and R. M. Swanson “Comments on ‘A method for determining energy gap narrowing in highly doped semiconductors,’” IEEE Trans. Electron Devices, vol. ED-31, no. 1, pp. 123–124, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , Issue.1 , pp. 123-124
    • del Alamo, J.A.1    Swanson, R.M.2
  • 48
    • 0020751931 scopus 로고
    • Photovoltaic measurement of bandgap narrowing in moderately doped silicon
    • J. A. del Alamo, R. M. Swanson, and A. Lietoila “Photovoltaic measurement of bandgap narrowing in moderately doped silicon,” Solid-State Electron., vol. 26, no. 5, pp. 483–489, 1983.
    • (1983) Solid-State Electron. , vol.26 , Issue.5 , pp. 483-489
    • del Alamo, J.A.1    Swanson, R.M.2    Lietoila, A.3
  • 49
    • 0003019646 scopus 로고
    • Thomas-Fermi approach to impure semiconductor band structure
    • E. O. Kane “Thomas-Fermi approach to impure semiconductor band structure,” Phys. Rev., vol. 131, no. 1, pp. 79–88, 1963.
    • (1963) Phys. Rev. , vol.131 , Issue.1 , pp. 79-88
    • Kane, E.O.1
  • 50
    • 0019016773 scopus 로고
    • Energy gap in Si and Ge: Impurity dependence
    • G. D. Mahan “Energy gap in Si and Ge: Impurity dependence,” J. Appl. Phys., vol. 51, no. 5, pp. 2634–2646, 1980.
    • (1980) J. Appl. Phys. , vol.51 , Issue.5 , pp. 2634-2646
    • Mahan, G.D.1
  • 51
    • 0019544925 scopus 로고
    • Transport equations for the analysis of heavily doped semiconductor devices
    • M. S. Lundstrom, R. J. Schwartz, and J. L. Gray “Transport equations for the analysis of heavily doped semiconductor devices,” Solid-State Electron., vol. 24, pp. 195–202, 1981.
    • (1981) Solid-State Electron. , vol.24 , pp. 195-202
    • Lundstrom, M.S.1    Schwartz, R.J.2    Gray, J.L.3
  • 52
    • 0020087475 scopus 로고
    • Electron and hole mobilities in silicon as a function of concentration and temperatures
    • N. D. Arora, J. R. Hauser, and D. J. Roulston, “Electron and hole mobilities in silicon as a function of concentration and temperatures,” IEEE Trans. Electron Devices, vol. ED-29, no. 2, pp. 292–295, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , Issue.2 , pp. 292-295
    • Arora, N.D.1    Hauser, J.R.2    Roulston, D.J.3
  • 53
    • 0020182919 scopus 로고
    • The dependence of the open-circuit voltage of silicon solar cells on emitter surface parameters
    • J. Nijs, F. D'Hoore, R. Mertens, and R. J. V. Overstraeten “The dependence of the open-circuit voltage of silicon solar cells on emitter surface parameters,” Solar Cells, vol. 6, pp. 405–418, 1982.
    • (1982) Solar Cells , vol.6 , pp. 405-418
    • Nijs, J.1    D'Hoore, F.2    Mertens, R.3    Overstraeten, R.J.V.4
  • 54
    • 0020750296 scopus 로고
    • Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters
    • B. Soerowirdjo and P. Ashburn “Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters,” Solid-State Electron., vol. 26, no. 5, pp. 495–498, 1983.
    • (1983) Solid-State Electron. , vol.26 , Issue.5 , pp. 495-498
    • Soerowirdjo, B.1    Ashburn, P.2
  • 55
    • 0001078652 scopus 로고
    • Auger coefficients for highly doped and highly excited silicon
    • J. Dziewior and W. Schmid “Auger coefficients for highly doped and highly excited silicon,” Appl. Phys. Lett., vol. 31, no. 5, pp. 346–348, 1977.
    • (1977) Appl. Phys. Lett. , vol.31 , Issue.5 , pp. 346-348
    • Dziewior, J.1    Schmid, W.2
  • 56
    • 0020763925 scopus 로고
    • Band-to-band Auger recombination in silicon based on a tunneling technique. II. Experiment
    • G. Krieger and R. M. Swanson, “Band-to-band Auger recombination in silicon based on a tunneling technique. II. Experiment,” J. Appl. Phys., vol. 54, no. 6, pp. 3456–3463, 1983.
    • (1983) J. Appl. Phys. , vol.54 , Issue.6 , pp. 3456-3463
    • Krieger, G.1    Swanson, R.M.2
  • 57
    • 0018951248 scopus 로고
    • The Shockley-like equations for the carrier densities and the current flows in materials with a nonuniform composition
    • K. M. van Vliet and A. H. Marshak “The Shockley-like equations for the carrier densities and the current flows in materials with a nonuniform composition,” Solid-State Electron., vol. 23, pp. 49–53, 1980.
    • (1980) Solid-State Electron. , vol.23 , pp. 49-53
    • van Vliet, K.M.1    Marshak, A.H.2
  • 58
    • 36749114763 scopus 로고
    • Charge neutrality in heavily doped emitters
    • J. del Alamo “Charge neutrality in heavily doped emitters,” Appl. Phys. Lett., vol. 39, no. 5, pp. 435–436, 1981.
    • (1981) Appl. Phys. Lett. , vol.39 , Issue.5 , pp. 435-436
    • del Alamo, J.1
  • 59
    • 0018683365 scopus 로고
    • Bifacial transcells for luminescent solar concentration
    • A. Cuevas, A. Luque, and J. M. Ruiz, “Bifacial transcells for luminescent solar concentration,” inIEDM Tech. Dig., pp. 314–317, 1979.
    • (1979) IEDM Tech. Dig. , pp. 314-317
    • Cuevas, A.1    Luque, A.2    Ruiz, J.M.3
  • 61
    • 0019284991 scopus 로고
    • Recent developments in thermophotovoltaic conversion
    • R. M. Swanson, “Recent developments in thermophotovoltaic conversion,” inIEDM Tech. Dig., pp. 186–189, 1980.
    • (1980) IEDM Tech. Dig. , pp. 186-189
    • Swanson, R.M.1
  • 62
    • 0018517568 scopus 로고
    • The importance of surface recombination and energy-bandgap narrowing in p-n-junction junction silicon solar cells
    • J. G. Fossum, F. A. Lindholm, and M. A. Shibib “The importance of surface recombination and energy-bandgap narrowing in p-n-junction junction silicon solar cells,” IEEE Trans. Electron Devices, vol. ED-26, no. 9, pp. 1294–1298, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , Issue.9 , pp. 1294-1298
    • Fossum, J.G.1    Lindholm, F.A.2    Shibib, M.A.3
  • 63
    • 0019080362 scopus 로고
    • Effect of emitter contact on current gain of silicon bipolar devices
    • T. H. Ning and R. D. Isaac “Effect of emitter contact on current gain of silicon bipolar devices,” IEEE Trans. Electron Devices, vol. ED-27, n. 11, pp. 2051–2055, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.11 , pp. 2051-2055
    • Ning, T.H.1    Isaac, R.D.2
  • 64
    • 0019565627 scopus 로고
    • Operating limits of Al-alloyed alloyed high—low junctions for BSF solar cells
    • J. del Alamo, J. Eguren, and A. Luque “Operating limits of Al-alloyed alloyed high—low junctions for BSF solar cells,” Solid-State Electron., vol. 24, pp. 415–420, 1981.
    • (1981) Solid-State Electron. , vol.24 , pp. 415-420
    • del Alamo, J.1    Eguren, J.2    Luque, A.3
  • 65
    • 0020707327 scopus 로고
    • The near ultra-67. violet quantum yield of silicon
    • F. J. Wilkinson, A. J. D. Farmer, and J. Geist, “The near ultra-67. violet quantum yield of silicon,” J. Appl. Phys., vol. 54, no. 2, pp. 1172–1174, 1983.
    • (1983) J. Appl. Phys. , vol.54 , Issue.2 , pp. 1172-1174
    • Wilkinson, F.J.1    Farmer, A.J.D.2    Geist, J.3
  • 66
    • 0019087175 scopus 로고
    • Spectral response self-calibration and interpolation of silicon photodiodes
    • J. Geist, E. F. Zalewski, and A. R. Schaefer “Spectral response self-calibration and interpolation of silicon photodiodes,” Appl. Optics, vol. 19, no. 22, pp. 3795–3799, 1980.
    • (1980) Appl. Optics , vol.19 , Issue.22 , pp. 3795-3799
    • Geist, J.1    Zalewski, E.F.2    Schaefer, A.R.3
  • 67
    • 11544267860 scopus 로고
    • High-efficiency p+-n-n+ back-surface-field surface-field silicon solar cells
    • J. G. Fossum and E. L. Burgess “High-efficiency p+-n-n+ back-surface-field surface-field silicon solar cells,” Appl. Phys. Lett., vol. 33, no. 3, pp. 238–240, 1978.
    • (1978) Appl. Phys. Lett. , vol.33 , Issue.3 , pp. 238-240
    • Fossum, J.G.1    Burgess, E.L.2
  • 68
    • 0014725465 scopus 로고
    • A charge control relation for bipolar transistors
    • H. K. Gummel “A charge control relation for bipolar transistors,” Bell Syst. Tech. J., vol. 49, no. 1, pp. 115–120, 1970.
    • (1970) Bell Syst. Tech. J. , vol.49 , Issue.1 , pp. 115-120
    • Gummel, H.K.1
  • 70
    • 0017632248 scopus 로고
    • Effects of impurity redistribution on the short-circuit current of n+ -p silicon sc lar cells
    • E. Y. Wang, L. Hsu, and H. W. Brandhorst, Jr. “Effects of impurity redistribution on the short-circuit current of n+ -p silicon sc lar cells,” J. Electrochem. Soc., vol. 124, no. 12, pp. 1915–1918, 1977.
    • (1977) J. Electrochem. Soc. , vol.124 , Issue.12 , pp. 1915-1918
    • Wang, E.Y.1    Hsu, L.2    Brandhorst, H.W.3
  • 72
    • 0019006955 scopus 로고
    • A new method of analyzing the short-circuit current of silicon solar cells
    • H. C. Hsieh, C. Hu, and C. I. Drowley “A new method of analyzing the short-circuit current of silicon solar cells,” IEEE Trans. Electron Devices, vol. ED-27, no. 4, pp. 883–885, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.4 , pp. 883-885
    • Hsieh, H.C.1    Hu, C.2    Drowley, C.I.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.