Minority-Carrier Hole Diffusion Length in Heavily-Doped Polysilicon and Its Influence on Poly silicon-Emitter Transistors

IEEE Transactions on Electron Devices

Volumn 35, Issue 7, 1988, Pages 1045-1054

  Chen, Dao Long ^a   Greve, David W ^a   Guzman, Alberto M ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - DOPING;

EMITTER DOPING; HEAVILY-DOPED POLYSILICON; MINORITY-CARRIER HOLE DIFFUSION LENGTH; POLYSILICON-EMITTER TRANSISTORS;

TRANSISTORS, BIPOLAR;

EID: 0024051117     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.3363     Document Type: Article

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