A general model for minority carrier transport in polysilicon emitters

Solid State Electronics

Volumn 32, Issue 4, 1989, Pages 323-327

  Jalali, B ^a   Yang, E S ^a  

^a Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON--CHARGE CARRIERS;

BASE CURRENT; INTERFACIAL POTENTIAL BARRIER; MINORITY CARRIER TRANSPORT; NONLINEAR TEMPERATURE DEPENDENCE; POLYSILICON EMITTERS;

TRANSISTORS, BIPOLAR;

EID: 0024649476     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90083-X     Document Type: Article

References (22)

1. Effect of emitter contact on current gain of silicon bipolar devices
2. The SIS tunnel emitter: A theory for emitters with thin interface layers
3. Current gain in polysilicon emitter transistors
4. Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors
5. An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations
6. Experimental study of the minority-carrier transport at the polysilicon—monosilicon interface
7. An Ebers-Moll model for the heterostructure bipolar transistor
8. APL
9. Dopant segregation in polycrystalline silicon