Experimental Study of the Minority-Carrier Transport at the Polysilicon—Monosilicon Interface

IEEE Transactions on Electron Devices

Volumn 32, Issue 4, 1985, Pages 807-816

  Neugroschel, Arnost ^a   Arienzo, Maurizio ^b   Isaac, Randall D ^b   Komem, Y ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - ELECTRIC PROPERTIES;

MINORITY-CARRIER TRANSPORT; POLYSILICON-MONOSILICON INTERFACE;

TRANSISTORS, BIPOLAR;

EID: 0022045066     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22024     Document Type: Article

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