Demonstration of the importance of the oxide breakup in polysilicon-contacted-emitter modeling

IEEE Transactions on Electron Devices

Volumn 38, Issue 9, 1991, Pages 2112-2117

  Egley, James L ^a   Gray, Jeffery L ^b  

^a IBM   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI; SEMICONDUCTING SILICON;

OXIDE BREAKUP; POLYSILICON;

TRANSISTORS, BIPOLAR;

EID: 0026219240     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.83737     Document Type: Article

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