The SIS Tunnel Emitter: A Theory for Emitters with Thin Interface Layers

IEEE Transactions on Electron Devices

Volumn 26, Issue 11, 1979, Pages 1771-1776

  De Graaff, H C ^a   De Groot, J Gerard ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR;

EID: 0018545806     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19684     Document Type: Article

References (14)

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2. H. Murrmann and A. Glasl, “Der polysil Emitter-Eine neue Technologie für verbesserte Transistoreigenschaften,” presented at the 6th Int. Congr. Microelectr., Munich, Germany, 1974.
3. J. Graul, A. Glasl, and H. Murrmann, “High-performance transistors with arsenic-implanted polysil emitters,” IEEE J. Solid-State Circuits, vol. SC-11, p. 491, 1976.
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6. J. Y. W. Seto, “The electrical properties of polycrystalline silicon films,” J. Appl: Phys., vol. 46, p. 5247, 1975.
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8. R. Stratton, “Volt-current characteristics for tunneling through insulating films,” J. Phys. Chem. Solids, vol. 23, p. 1177, 1962.
9. H. C. Card and E. H. Rhoderick, “Studies of tunnel MOS diodes, part I,” J. Phys. D.: Appl. Phys., vol. 4, p. 1589, 1971.
10. H. K. Gummel, “Measurements of the number of impurities in the base layer of a transistor,” Proc. IRE, vol. 49, p. 834, 1961.
11. H. C. de Graaff, J. W. Slotboom, and A. Schmitz, “The emitter efficiency of bipolar transistors,” Solid-State Electron., vol. 20, p. 515, 1977.
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13. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley-Interscience, Interscience, 1969, p. 378.
14. J. W. Slotboom, “The pn-product in silicon,” Solid-State Electron., vol. 20, p. 279, 1977.