Effect of Emitter Contact on Current Gain of Silicon Bipolar Devices

IEEE Transactions on Electron Devices

Volumn 27, Issue 11, 1980, Pages 2051-2055

  Ning, Tak H ^a   Isaac, Randall D ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR;

EID: 0019080362     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.20148     Document Type: Article

References (9)

1. P. M. Solomon and D. D. Tang, “Bipolar circuit scaling,” in 1979 ISSCC Dig. Tech. Papers, pp. 86–87.
2. H. C. de Graaff and J. G. de Groot “The SIS tunnel emitter,” in 1978 IEDM Tech. Dig., pp. 333–335; and “The SIS tunnel emitter: A theory for emitters with thin interface layers,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1771–1776, 1979.
3. P. M. Solomon, D. D. Tang, and R. D. Isaac, “A polysilicon base bipolar transistor,” in 1979 IEDM Tech. Dig., pp. 510–513.
4. J. Graul, A. Glasl, and H. Murrmann “High-performance transistors with arsenic-implanted polysil emitters,” IEEE J. Solid-State Circuits, vol. SC-11, pp. 491–495, 1976.
5. D. M. Caughey and R. E. Thomas “Carrier mobilities in silicon empirically related to doping and field,” Proc. IEEE, vol. 55, pp. 2191–2193, 1967.
6. J. Dziewior and W. Schmid, “Auger coefficients for highly doped and highly excited silicon,” Appl. Phys. Lett., vol. 31, pp. 346–348, 1977.
7. H. C. de Graaff, J. W. Slotboom, and A. Schmitz “The emitter efficiency of bipolar transistors,” Solid-State Electron., vol. 20, pp. 515–521, 1977.
8. M. E. Cowher and T. O. Sedgwick, “Chemical vapor deposited polycrystalline silicon,” J. Electrochem. Soc., vol. 119, pp. 1565–1570, 1972.
9. V. I. Fistul, Heavily Doped Semiconductors. New York: Plenum, 1969, ch. 3.