Dose rate laser simulation tests adequacy: Shadowing and high intensity effects analysis

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 3115-3121

  Nikiforov, A Y ^a   Skorobogatov, R K ^a  

^a Specialized Electronic Systems   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; LASER BEAM EFFECTS; MATHEMATICAL MODELS; PULSED LASER APPLICATIONS; X RAYS;

LASER SIMULATION;

INTEGRATED CIRCUIT TESTING;

EID: 0030350168     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556913     Document Type: Article

References (27)

1. D. HHabing, Use of Laser to Simulate Radiation - induced Transients in Semiconductors and Circuits, IEEE Trans. Nuc. Sei. , Vol. NS-12, No. 6, p. 91-100 (1965).
2. A. Y. Nikiforov, I. V. Poljakov Test CMOS / SOS RAM for Transient Radiation Upset Comparative Research And Failure Analysis, IEEE Trans. Nuc. Sei. , Vol. NS-42, No. 6, pp. 2138-2142 (1995).
3. T. D. Ellis, Y. D. Kim, Use of a Pulsed Laser as an Aid to Transient Upset Testing of 12L LSI Microcircuits, IEEE Trans. Nuc. Sei. , Vol. NS-25, No. 6, pp. 1489-1493 (1978).
4. TJ. Stultz, J. L. Crowley, F. AJunda, An Investigation of the Transient Ionizing Radiation Response of Diffiised Resistors Using a Pulsed Laser, IEEE Tram. Nucl. Sei. , Vol. NS-27, No. 5, p. 1362-1367 (1980).
5. EE. King, B. Ahlport, G. Tettemer, K. Mulker, P. Linderman, Transient Radiation Screening of Silicon Devices Using Backside Laser Irradiation, IEEE Trans. Nucl. Sei. , 1982, Vol. NS-29, No. 6, p. 1809 - 1815 (1982).
6. E. E. King, G. L. Tettemer, P. B. Linderman, P. E. Micheletty, The Hardness Assurance Wafer Probe - HAWP, IEEE Trans. Nucl. Sei. , Vol. NS-30, No. 6, p. 4345 - 4350 (1983).
7. M. N. Hardman, A. R. Edwards, Exploitation of a Pulsed Laser to Explore Transient Effects on Semiconductor Devices, IEEE Tram. Nucl. Sei. , Vol. NS-31, No. 6, p. 1406-1410 (1984).
8. A. H. Johnston, M. P. Baze, Mechanisms for the Latchup Window Effects in Integrated Circuits, IEEE Trans. Nucl. Sei. , Vol. NS-32, No. 6, p. 4018 - 4025 (1985).
9. A. H. Johnston, M. P. Baze, Experimental Methods for Determining Latchup Paths in Integrated Circuits, IEEE Trans. Nucl. Sei. , Vol. NS-32, No. 6, p. 4260-4265 (1985).
10. MP. Baze, A. HJonston, Latchup Paths in Bipolar Integrated Circuits, IEEE Trans. Nucl. Sei. , Vol. NS-33, No. 6, p. 1499-1504 (1986).
11. W. D. Raburn, S. P. Buchner, K. Kang, R,Singh, S. Sayers, Comparison of Threshold Transient Upset Levels Induced by Flash X-Rays and Pulsed Lasers, IEEE Trans. Nucl. Sei. , Vol. NS-35, No. 6, p. 1512-1516 (1988).
12. A. H. Johnston, Charge Generation and Collection in p-n Junctions Excited with Pulsed Infrared Lasers, IEEE Tram. Nucl. Sei. , Vol. NS-40, No. 6, p. 1694-1702 (1993).
13. J. S. Melinger, S. Buchner, D. McMorrow, W. J. Stapor, T. R. Weatherford, A. B. Campbell, Critical Evaluation of the Pulsed Laser Method for Single Event Effects Testing and Fundamental Studies, IEEE Trans. Nucl. Sei. , Vol. NS-41, No. 6, p. 2574 - 2584 (1994).
14. P. Fouillat, HXapuyade, A. Touboul, J. P. Dom and R. Gaillard, Numerical Modelling of Mechanisms involved in Latchup Triggering by a Laser Beam, IEEE Trans, on Nucl. Sei. , Vol. 43, No. 3, pp. 944-951(1996).
15. J. L. Pankove, Optical Processes in Semiconductors (PrenticeHall, New Jersey) 1971, - 456 p.
16. P. EShmid, Optical Absorption in Heavily Doped Silicon, Physical Review. , Ser. B: Condensed Materials, Vol. 23, No. 10, p. 5531-5536(1981).
17. S. T. Pantelides, A. Selloni, R. Car, Energy-Gap Reduction in Heavily Doped Silicon: Causes and Consequences, Solid State Electronics, Vol. 28, No. 1-2. p. 17 - 24 (1985).
18. J. W. Schwartzenberg, C. O. Nwankpa, R. Fischl, A. Rosen, D. B. Gilbert and D. Richardson Steady State Characterization of an Optically Controlled p-i-n Diode for Low Frequency Switching Under Front/Back Illumination, IEEE Trans. Electron Devices, Vol. 43, No. 7, pp. 1061 - 1065 (1996).
19. The DIODE-2D Software Simulator Manual Guide, SPELS, 1995.
20. G. D. Byrne, A. C. Hiadmarsh Stiff ODE solvers: A review of current and coming attractions J. Comput. Phys. , V. 70, , pp. 1-62 (1987).
21. C. W. Gear Numerical initial value problems in ordinary differential equations (Prentice Hall, Englewood Cliffs, N. -Y. ), 1971.
22. M. C. Eisenstat, M. H. Gursky, M. HSchultz, A. H. Sherman. Yale sparse matrix package. The nonsymmetric codes. Report 114, Dept. Comp. Science, Yale Univ. , New Haven, CT. 1977.
23. LDR Software Simulator Manual Guide, SPELS, 1993.
24. AY. Nikiforov, A. I. Chumakov, P. K. Skorobogatov, CMOS 1C Transient Radiation Effects Investigations, Model Verification and Parameter Extraction With the Test Structures Laser Simulation Tests in Proceedings of the International Conference on Microelectronics Test Structures ICMTS 1996. Trento. Italy, march 1996, pp. 253-258.
25. A. Y. Nikiforov, O. B. Mavritsky, A. N. Egorov, V. S. Figurov, V. A. Telets, P. K. Skorobogatov, S. A. Polevich, RADON-5E Portable Pulsed Laser Simulator: Description, Qualification Technique and Results, Dosimetry Procedure, presented at Nuclear Space Radiation Effects Workshop ' 96, Indian Wells, July 15-19, 1996.
26. A. Y. Nikiforov, I. V. Poljakov CMOS/SOS RAM Transient
27. Radiation Upset and Inversion Effect Investigation, IEEE Trans. Nuc. Sei. , Vol. NS-43, No. 6, (1996) - this issue.