Transient radiation screening of silicon devices using backside laser irradiation

IEEE Transactions on Nuclear Science

Volumn 29, Issue 6, 1982, Pages 1809-1815

  King, E E ^a   Ahlport, B ^a   Tettemer, G ^a   Mulker, K ^a   Linderman, P ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS - APPLICATIONS; RADIATION EFFECTS;

INTEGRATED CIRCUITS;

EID: 0020252138     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1982.4336452     Document Type: Article

References (5)

1. D. H. Habing, “The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and Circuits”, IEEE Trans, on Nuc. Sci., Vol. NS-12, No. 5, p. 91, Oct. 1965
2. D. McWilliams, et al., Investigation of Laser Simulation for Microelectronic Device Hardening, Report AFCRL-67-0102, TRW Systems Group, Jan. 1967
3. T. D. Ellis and Y. D. Kim, “Use of a Pulsed Laser 2 as an Aid to Transient Upset Testing of I L LSI Microcircuits”, IEEE Trans, on Nuc. Sci., Vol. NS-25, No. 6, p. 1489, Dec. 1978
4. L. M. Brekhovshik, Waves in Layered Media, Academic Press, Applied Mathematics and Mechanics Series, No. 6, 1960
5. V. K. Subashiev and G.B. Dubrovskii, “Indirect Transitions and the Structure of the Valence Band of Silicon”, Soviet Phys - Solid State, Vol. 6, No. 5, p. 1017, Nov. 1964